Manufacturing method of LED (light-emitting diode) chip with inverted structure

The invention relates to a manufacturing method of an LED (light-emitting diode) chip with an inverted structure. The LED chip comprises an N-type electrode formation region and a P-type electrode formation region, wherein the N-type electrode formation region comprises a substrate, a buffer layer, an N-type layer, an N-type respective limiting layer, an active region layer, a P-type respective limiting layer, a P-type layer, a P-type ohmic contact layer, a light reflecting layer and an insulating film; one end face of an N-type electrode passes through the insulating film so as to be connected with the light reflecting layer, and the other end face of the N-type electrode is connected with a heating panel through a PCB (printed circuit board); the P-type electrode formation region comprise a substrate, a buffer layer, an N-type layer and the insulating film, one end of a P-type electrode passes through the insulating film so as to be connected with the N-type layer, and the other end of the P-type electrode is connected with the heating panel by virtue of the PCB; and the two end faces, respectively connected with the PCB, of the N-type electrode and the P-type electrode are positioned at a same horizontal plane. The manufacturing method provided by the invention has the advantages that the N-type electrode and P-type electrode of the LED chip are manufactured in the same surface, the package yield of a chip inversion process is increased, thereby avoiding the occurrence of the electrode rosin joint or sealed-off state.