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Passivating treatment process of electronic grade arsenic hydride, hydrogen phosphide and mixture gas steel cylinder

A gas cylinder, passivation treatment technology, applied in the direction of phosphine, arsenic/antimony hydride, metal hydride, etc.

Active Publication Date: 2016-12-07
HEFEI ZHENGFAN ELECTRONICS MATERIAL
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Problems solved by technology

This is because through mechanical processing, the inner wall of the steel cylinder can only reach a certain roughness, that is, there will still be very fine pits on the surface of the inner wall of the steel cylinder, so that the moisture remaining in the steel cylinder container is adsorbed on the pits on the inner wall of the steel cylinder, It is difficult to reduce the moisture to below 0.1ppm by using the traditional heating and vacuuming treatment method

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  • Passivating treatment process of electronic grade arsenic hydride, hydrogen phosphide and mixture gas steel cylinder

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Embodiment Construction

[0017] With reference to accompanying drawing, a kind of passivation treatment process of electronic grade arsine, phosphine and its mixture gas steel cylinder is characterized in that, comprises the following steps:

[0018] 1) heating and baking the first steel cylinder 1 to be passivated at a high temperature of 100-200°C;

[0019] 2) Vacuumize the first steel cylinder 1 through the exhaust fan 8, and continue to heat and bake the first steel cylinder 1 at a temperature of 100-200°C. 3) Purging replacement: when the first steel cylinder 1 is pumped to a vacuum state , filling the first steel cylinder 1 with nitrogen or hydrogen or an inert gas by displacing the gas cylinder 9, and continuously heating and baking the first steel cylinder 1 at a temperature of 100-200°C;

[0020] 4) Vacuumize the first steel cylinder 1 through the exhaust fan 8, and continue to heat and bake the first steel cylinder 1 at a high temperature of 100-200°C. The whole process of this step controls...

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Abstract

The invention relates to a passivating treatment process of a super-high-purity arsenic hydride, hydrogen phosphide and mixture gas steel cylinder. The process comprises the following steps that a first steel cylinder to be subjected to passivating treatment is heated and baked at a high temperature of 100 to 200 DEG C; the first steel cylinder is subjected to vacuum pumping treatment through an exhaust fan; the first steel cylinder is continuously subjected to heating and baking treatment at a high temperature of 100 to 200 DEG C; when the first steel cylinder is pumped into a vacuum state, scavenging and replacement are performed; the first steel cylinder is subjected to vacuum pumping treatment through the exhaust fan, and the first steel cylinder is continuously subjected to heating and baking treatment at a high temperature of 100 to 200 DEG C; when the first steel cylinder is pumped into a vacuum state, the inner wall is passivated; the first steel cylinder is subjected to vacuum pumping treatment through a gas pumping-back device; extracted arsenic hydride and hydrogen phosphide gas is recovered to a gas recovery steel cylinder.

Description

technical field [0001] The invention belongs to the field of electronic-grade gas, and relates to the internal treatment of ultra-high-purity gas cylinders, in particular to a passivation treatment process for electronic-grade arsine, phosphine and their mixture gas cylinders. Background technique [0002] Ultra-high-purity gases are indispensable raw materials for the production of electronic industries such as VLSI, flat-panel display devices, compound semiconductor devices, solar cells, and optical fibers. They are widely used in thin-film, etching, doping, vapor deposition, and diffusion processes. Ultra-high-purity arsine, phosphine and their mixed gases are one of the most important doping media in the manufacture of integrated circuit chips, and play a key role in the ion implantation process. One of the most important raw materials for the synthesis of compound semiconductor gallium arsenide and gallium arsenide phosphide in the process. Whether it is integrated cir...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B25/06C01B6/06C23C8/06
CPCC01B6/065C01B25/06C23C8/06
Inventor 曾庆腾许召文
Owner HEFEI ZHENGFAN ELECTRONICS MATERIAL
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