Electroluminescence device based on boron-containing organic compound

[0110] The structure of the organic electroluminescent device prepared in Example 1 is as follows: figure 1 As shown, the specific preparation process of the device is as follows:

[0111] Clean the ITO anode layer 2 on the transparent glass substrate layer 1, ultrasonically clean it with deionized water, acetone, and ethanol for 30 minutes each, and then treat it in a plasma cleaner for 2 minutes; dry the ITO glass substrate and place it in a vacuum In the cavity, the vacuum degree is less than 1*10 -6 Torr, on the ITO anode layer 2, a mixture of HT1 and P1 with a film thickness of 10 nm is evaporated, the mass ratio of HT1 and P1 is 97:3, and this layer is the hole injection layer 3; then, HT1 with a thickness of 50 nm is evaporated, and the layer As the hole transport layer 4; then vapor-deposit 20nm-thick EB1, which serves as the electron blocking layer 5; further, vapor-deposit a 25nm light-emitting layer 6, wherein the light-emitting layer includes a host material and a...

[0113] The preparation methods of Examples 2-21 are similar to those of Example 1, and the selection of specific materials is shown in Table 1.