Integrated Gan-based sensor and method for simultaneous monitoring of solution temperature and pH

[0034] This embodiment provides a method for preparing an integrated GaN-based sensor for synchronous monitoring of solution temperature and pH, including the following steps:

[0035] S1: growing the stress buffer layer 2 and the GaN epitaxial layer 3 sequentially on the upper surface of the substrate layer 1 to obtain a sensor intermediate a; wherein the substrate layer 1 is a Si substrate, a sapphire substrate, a SiC substrate or a GaN substrate Any one of the self-supporting substrates; the stress buffer layer 2 is any one of AlN, AlGaN or GaN, or a combination of any two or more; and according to the difference in specifications, the thickness of the stress buffer layer 2 is between It can be adjusted between 0.01 and 100 μm; the GaN epitaxial layer is an unintentionally doped GaN epitaxial layer, and its dislocation density is 10 7 / cm 3 , the thickness of the GaN epitaxial layer can be adjusted between 0.1 and 100 μm;

[0036]S2: An AlGaN barrier layer 4 is grown on t...

[0039] This embodiment provides a method for preparing an integrated GaN-based sensor for synchronous monitoring of solution temperature and pH, including the following steps:

[0040] I: growing the stress buffer layer and the GaN epitaxial layer sequentially on the upper surface of the substrate layer to obtain a sensor intermediate a; wherein the substrate layer 1 is a Si substrate, a sapphire substrate, a SiC substrate or a GaN self-supporting substrate bottom; the stress buffer layer 2 is any one of AlN, AlGaN or GaN, or any combination of two or more; and according to the difference in specifications, the thickness of the stress buffer layer 2 is 0.01-100 μm can be regulated; the GaN epitaxial layer is an unintentionally doped GaN epitaxial layer, and its dislocation density is 10 8 / cm 3 , the thickness of the GaN epitaxial layer can be adjusted between 0.1 and 100 μm;

[0041] II: On the GaN epitaxial layer of the sensor intermediate a obtained in step I, an AlGaN ba...