The invention discloses a preparation method of a PbSe 
quantum dot near-
infrared light-emitting 
diode. The preparation method comprises the following steps: adding OA, ODE and PbO 
powder into a three-necked flask, then injecting 
nitrogen into the three-necked flask, and thoroughly removing air; heating the three-necked flask until the PbO 
powder completely disappears, and a 
mixed solution becomescolorless; adding an Se-TOP solution containing Se 
powder into the three-necked flask, and heating the three-necked flask to obtain PbSe QDs particles; adding methylbenzene into the three-necked flask, and immersing the three-necked flask in a room-temperature water bath to perform a complete 
quenching reaction; precipitating and dispersing a PbSe QDs sample by using 
methanol and ethane, purifyingthe PbSe QDs sample, then dispersing the purified PbSe QDs sample into 
tetrachloroethylene; and injecting a PbSe QDs solution into a hollow hemisphere through an 
injector, sealing the hollow hemisphere, and placing the hollow hemisphere containing the PbSe QDs solution on a GaN 
chip. The near-
infrared light-emitting 
diode prepared by the method has the characteristics of simplicity in manufacturing, 
narrow band, small size and easiness in tuning.