The invention discloses a 
wafer-level fan-out PoP encapsulation structure and a making method thereof. The 
wafer-level fan-out PoP encapsulation structure is formed by stacking at least one fan-out PoP encapsulation units, each two adjacent fan-out PoP encapsulation units are connected through a second 
welding ball and coated and sealed by adopting a second plastic sealing material, each fan-out PoP encapsulation unit comprises an IC 
chip, a first plastic sealing material, a second binding material, a 
metal salient point structure, a first 
metal layer, a second 
metal layer, a first rewiring metal routing layer, a first 
dielectric material layer, a second rewiring metal routing layer, a second 
dielectric material layer, a first 
welding ball and the second 
welding ball, a bonding pad of each IC 
chip is connected with the corresponding first rewiring metal routing layer, each metal 
salient point structure forms a molded plastic through hole, and three-dimensional integrated 
interconnection between an upper encapsulating body as well as a lower encapsulating body in each fan-out PoP encapsulation unit and an external structure is realized through the corresponding molded plastic through hole. The making method mainly includes arranging a 
metal substrate wafer on a first carrier wafer; making the metal 
salient point structure on the surface of the 
metal substrate wafer; feeding the 
chip; plastically sealing, making the first rewiring metal routing layer; arranging a second carrier wafer, removing the first carrier wafer, 
etching the lower surface of the 
metal substrate wafer to form the second rewiring metal routing layer; performing stacking and 
reflow soldering; removing the second carrier wafer; forming the fan-out PoP encapsulation unit after ball placing and 
reflow soldering processes; performing stacking and 
reflow soldering on the fan-out PoP encapsulation units; and forming the wafer-level fan-out PoP encapsulation structure after plastic sealing. By the wafer-level fan-out PoP encapsulation structure and the making method, the problems of encapsulating density, cost and reliability of existing PoP encapsulation technology are solved.