A 
semiconductor light emitting element, manufacturing method thereof, integrated 
semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a 
sapphire substrate, and a growth 
mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth 
mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined 
crystal planes each composed of a plurality of 
crystal planes inclined from the major surface of the 
sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an 
active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side 
electrode and an n-side 
electrode are formed.