173results about How to "Reliable lighting" patented technology

A semiconductor light emitting device comprises a metallic support plate 1; a light-reflective reflector 3 mounted on the support plate 1 and formed with a hole 3a; a semiconductor light emitting element 2 mounted on the support plate 1 within the hole 3a of the reflector 3, and a plastic encapsulant 6 for sealing an outer periphery of the reflector 3 and an upper surface 1c of the support plate 1. As the reflector 3 is electrically connected to a wiring conductor 5 or a lead wire 8 extends through a notch 3k formed in the reflector 3 to electrically connect the semiconductor light emitting element 2 and wiring conductor 5, wiring span of the lead wire 8 can be shortened to prevent deformation of the lead wire 8. Simultaneously, diameter of the reflective surface 3c in the reflector 3 is reduced and height of the reflector 3 is increased to improve directivity and axial brightness of light from the semiconductor light emitting device. Also, formation of the hole 3a effectively prevents further thermal degradation of heat-resistible plastic encapsulant 6 or other resin components.

A nitride semiconductor light emitting device includes a conductive substrate, a first metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer in this order. The nitride semiconductor light emitting device additionally has an insulating layer covering at least side surfaces of the second conductivity-type semiconductor layer, the emission layer and the first conductivity-type semiconductor layer. A method of manufacturing the same is provided. The nitride semiconductor light emitting device may further include a second metal layer. Thus, a reliable nitride semiconductor light emitting device and a method of manufacturing the same are provided in which short-circuit at the PN junction portion and current leak is reduced as compared with the conventional examples.

An extreme ultraviolet light source apparatus, which is to generate an extreme ultraviolet light by irradiating a target with a main pulse laser light after irradiating the target with a prepulse laser light, the extreme ultraviolet light source apparatus comprises: a prepulse laser light source generating a pre-plasma by irradiating the target with the prepulse laser light while a part of the target remains, the pre-plasma being generated at a different region from a target region, the different region being located on an incident side of the prepulse laser light; and a main pulse laser light source generating the extreme ultraviolet light by irradiating the pre-plasma with the main pulse laser light.

An object of the prevent invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode.

A full-color flat panel display using emission colors of red, green, and blue is increasingly required to have higher definition, higher aperture ratio and higher reliability. A light emitting device of the invention has an insulator referred to as a bank, that is, a black matrix (BM), between pixels on a substrate side where a light emitting element and a TFT are disposed, and has colored layers of red, green, and blue on a sealing substrate side. This enables right and left margins of a pixel to be taken and a width of the bank to be 30 μm or less, preferably, 5 μm to 20 μm.

A semiconductor light emitting device comprises a metallic support plate 1; a light-reflective reflector 3 mounted on the support plate 1 and formed with a hole 3a; a semiconductor light emitting element 2 mounted on the support plate 1 within the hole 3a of the reflector 3, and a plastic encapsulant 6 for sealing an outer periphery of the reflector 3 and an upper surface 1c of the support plate 1. As the reflector 3 is electrically connected to a wiring conductor 5 or a lead wire 8 extends through a notch 3k formed in the reflector 3 to electrically connect the semiconductor light emitting element 2 and wiring conductor 5, wiring span of the lead wire 8 can be shortened to prevent deformation of the lead wire 8. Simultaneously, diameter of the reflective surface 3c in the reflector 3 is reduced and height of the reflector 3 is increased to improve directivity and axial brightness of light from the semiconductor light emitting device. Also, formation of the hole 3a effectively prevents further thermal degradation of heat-resistible plastic encapsulant 6 or other resin components.

When a resistance load inverter is used to control lighting / non-lighting of a pixel, in accordance with characteristic variations of a transistor forming the resistance load inverter, variations occur in light emission of each pixel. As an inverter in a pixel, an N channel transistor and a P channel transistor are used to apply a CMOS inverter. Even when characteristics of the transistor forming the CMOS inverter vary and inverter transfer characteristics vary, there is little effect on controlling lighting / non-lighting of the pixel, therefore, light emission variations of each pixel can be eliminated. Further, a signal potential of a scan line is used as one power source of a potential of the inverter, therefore, an aperture ratio of the pixel can be increased.

The invention discloses a distributed synchronization solar energy street lamp control system comprising a photovoltaic cell array, a centralized control system, a storage cell array and an inverter, wherein the photovoltaic cell array and the storage cell array are respectively connected with the centralized control system connected with the inverter; and the alternating current output end of the inverter is connected with a street lamp sequenced power supply installed on a road. The centralized control system comprises a sensor subsystem and a principal computer control center subsystem, wherein the sensor subsystem comprises a sunlight sensor for detecting the illumination intensity of the street lamp working condition; the principal computer control center subsystem is used for controlling the photovoltaic cell array to convert solar energy into electric energy so as to store the electric energy in the storage cell array according to a signal collected by the sensor subsystem whenthe illumination intensity detected by the sunlight sensor is more than a preset threshold; and otherwise, the storage cell array is controlled to discharge and supply power for the street lamp sequence by the inverter. The distributed synchronization solar energy street lamp control system can improve stability, has high utilization ratio of the photovoltaic cell and the storage cell, lowers application cost and strengthens maintainability.

Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.

A method of coating phosphor powder with a composite oxide, and a light emitting device that employs the phosphor powder coated with the composite oxide are disclosed. The method includes mixing a silicon oxide precursor and a precursor of another oxide in water and alcohol to form a primary coating layer on a sulfide phosphor through a sol-gel reaction, heat treating the primary coating layer to form a composite oxide layer of the silicon oxide and the other oxide from the primary coating layer. The method improves moisture stability of the sulfide phosphor compared to a sulfide phosphor coated with a single silicon oxide film.

An auger assembly has a shaft supporting flight units having lug and recess connections allowing broken flight units to be removed from the shaft and replaced with another flight unit. The auger assembly is incorporated in an ice drill having a cordless electric motor and a cutting head. A coupling locks the auger assembly on the motor drive shaft.

The present invention relates to a garage light assembly having a housing with a lamp mounting surface wherein a main high intensity discharge lamp and an auxiliary circular high output fluorescent lamp are mounted. The auxiliary lamp is mounted centrally within the assembly and above the light emitting portion of the high intensity discharge lamp so that the light pattern emitted from the auxiliary lamp is symmetrical and the auxiliary lamp does not shadow the light emitted from the high intensity discharge lamp.

A light emitting device, comprises a light emitting element, a plurality of electroconductive layers on which said light emitting element is mounted or which are electrically connected to the light emitting element, and a translucent insulating member that seals the light emitting element and has the electroconductive layers as its bottom surface, wherein the electroconductive layers have a protrusion on part of their side faces, and the upper edges of the protrusion is rounded off.

Disclosed is an organic light emitting display device including an anode, a cathode, a plurality of organic layers and a partition member. The plurality of organic layers is disposed between the anode and the cathode, where at least one layer is separated to minimize current leakage into neighboring pixels. The partition member is disposed between the neighboring pixels and configured to separate the plurality of organic layers. The least one separated layer includes a charge generation layer. Because at least one layer is separated, current leakage into neighboring pixels can be minimized. Accordingly, defects resulting from light leakage and the mixing of colors of light from neighboring pixels may be reduced and display quality is enhanced.

A method and apparatus for initializing optical recording media is provided that detects the intensity of a reflective light off of an optical recording media and analyzes the initializing condition based on the detected intensity during an initializing process. The light is radiated on a rotating phase-change optical recording medium. The light may be moved in a radial direction of the optical recording medium. The detected intensity of the reflected light may be used to identify crystallized portions and amorphous portions of the optical media. The initialization process can be adaptively controlled to ensure proper initialization. If desired, re-initialization can be limited to those areas detected to be outside of the predetermined parameters.

A present nitride-based semiconductor light emitting device includes: a pattern surface formed on a conductive substrate; a multilayered metal layer formed on the pattern surface; and a multilayered semiconductor layer formed on the multilayered metal layer, and characterized in that main surfaces of the multilayered metal layer and the multilayered semiconductor layer have smaller area than the pattern surface has, and the multilayered semiconductor layer includes a p type nitride-based semiconductor layer, a light emitting layer and an n type nitride-based semiconductor layer. Thus, a highly reliable nitride-based semiconductor light emitting device with excellent adhesion between a nitride-based semiconductor layer and a conductive substrate, and a manufacturing method thereof are provided.

An LPP EUV light source device for forming a uniform droplet target regardless of a frequency of a drive signal applied to a vibrator. The LPP EUV light source device includes: a chamber in which the extreme ultra violet light is generated; an injection nozzle that injects a target material into the chamber; a vibrator that has two terminals and vibrates to provide vibration to the injection nozzle when a drive signal is applied between the two terminals via a cable; a voltage generator that generates the drive signal; a controller that monitors a voltage between the two terminals of the vibrator and feedback controls the voltage generator such that an amplitude of the monitored voltage falls within a predetermined range; and a laser source that generates a laser beam to be irradiated to the target material injected from the injection nozzle.

An LPP EUV light source device for forming a uniform droplet target regardless of a frequency of a drive signal applied to a vibrator. The LPP EUV light source device includes: a chamber in which the extreme ultra violet light is generated; an injection nozzle that injects a target material into the chamber; a vibrator that has two terminals and vibrates to provide vibration to the injection nozzle when a drive signal is applied between the two terminals via a cable; a voltage generator that generates the drive signal; a controller that monitors a voltage between the two terminals of the vibrator and feedback controls the voltage generator such that an amplitude of the monitored voltage falls within a predetermined range; and a laser source that generates a laser beam to be irradiated to the target material injected from the injection nozzle.

When a resistance load inverter is used to control lighting / non-lighting of a pixel, in accordance with characteristic variations of a transistor forming the resistance load inverter, variations occur in light emission of each pixel. As an inverter in a pixel, an N channel transistor and a P channel transistor are used to apply a CMOS inverter. Even when characteristics of the transistor forming the CMOS inverter vary and inverter transfer characteristics vary, there is little effect on controlling lighting / non-lighting of the pixel, therefore, light emission variations of each pixel can be eliminated. Further, a signal potential of a scan line is used as one power source of a potential of the inverter, therefore, an aperture ratio of the pixel can be increased.

A laser processing apparatus includes a chuck table for holding a workpiece and a laser beam applying unit for applying a laser beam to the workpiece. A laser beam oscillating unit oscillates a laser beam and a focusing unit focuses the laser beam onto the workpiece. A reflecting unit is provided on the optical axis of the focusing unit. A wavelength detecting unit detects the wavelength of the plasma light reflected by the reflecting unit, and a controller determines the material of the workpiece according to a detection signal from the wavelength detecting unit, to control the laser beam applying unit.

A full-color flat panel display using emission colors of red, green, and blue is increasingly required to have higher definition, higher aperture ratio and higher reliability. A light emitting device of the invention has an insulator referred to as a bank, that is, a black matrix (BM), between pixels on a substrate side where a light emitting element and a TFT are disposed, and has colored layers of red, green, and blue on a sealing substrate side. This enables right and left margins of a pixel to be taken and a width of the bank to be 30 μm or less, preferably, 5 μm to 20 μm.

An object of the invention is to provide a highly reliable light emitting element with low drive voltage and longer life than a conventional light emitting element, and a display device using the light emitting element. A light emitting element according to the invention comprises a plurality of layers which is interposed between a pair of electrodes, in which at least one of the plurality of layers is formed of a layer containing a light emitting material, and the layer containing a light emitting material is interposed between a layer containing an oxide semiconductor and / or metal oxide and a material having a higher hole transporting property than an electron transporting property, and a layer containing an oxide semiconductor and / or metal oxide, a material having a higher electron transporting property than a hole transporting property and a material which can donate electrons to the material having a higher electron transporting property than a hole transporting property.

A light emitting device includes: a glass package (2) having a recess (5) in its center; a through-hole electrode (4) formed by filling a through hole (3), which is formed at a bottom of the recess (5), with a conductive material; a light emitting diode element (6) received in the recess (5) and mounted on the through-hole electrode (4); an insulating multilayer interference film (7) formed on an inner wall surface and a bottom surface of the recess (5); and a sealing material for sealing the light emitting diode element. With this structure, the light emitting device is improved in reliability.

Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.

An illuminating device includes a light source including a light-emitting element, an electrode electrically connected to the light-emitting element, and a heat radiation terminal electrically isolated from the light-emitting element; and a multilayer substrate including a plurality of insulating layers, a plurality of metal layers, an electrically conducting interlayer contact portion, and a heat-conducting interlayer contact portion. The insulating layers include all insulating layer having a mount surface on which the light source is mounted with the electrode and the heat radiation terminal therebetween. The metal layers include an electrically conducting metal layer electrically connected to the electrode and disposed so as to be separated from the light source by the insulating layer having the mount surface and an electrically isolated metal layer electrically isolated from the other metal layers and disposed most distant from the mount surface of all the metal layers. The electrically conducting interlayer contact portion electrically connects the electrode to the electrically conducting metal layer. The heat-conducting interlayer contact portion connects the heat radiation terminal to the electrically isolated metal layer.

The present invention relates to a garage light assembly having a housing with a lamp mounting surface wherein a main high intensity discharge lamp and an auxiliary circular high output fluorescent lamp are mounted. The auxiliary lamp is mounted centrally within the assembly and above the light emitting portion of the high intensity discharge lamp so that the light pattern emitted from the auxiliary lamp is symmetrical and the auxiliary lamp does not shadow the light emitted from the high intensity discharge lamp.

An opto-electric hybrid module capable of reducing the propagation loss of light beams, and a manufacturing method thereof. An opto-electric hybrid module in which a light-emitting element and a light-receiving element are mounted on the front surface side of an electric circuit board E, and an optical waveguide W1 is bonded to the back surface side thereof. The optical waveguide W1 includes a core having opposite end portions formed as light reflection portions. Portions of the core near the opposite end portions are formed as extensions extending from the light reflection portions toward the light-emitting element and the light-receiving element. The extensions and are positioned in through holes for light propagation formed in the electric circuit board E, and have distal end surfaces and in face-to-face relationship with a light-emitting portion of the light-emitting element and a light-receiving portion of the light-receiving element, respectively.

Automated banking machines include a Global Positioning System (GPS). The machines can transmit their GPS location reading to a service center. The service center can receive through a customer's cell phone, a customer request for directions to the nearest cash dispensing machine that does not have a transaction fee. The customer request can include account data and GPS location of the cell phone. The service center can determine from the account data which financial networks would not cause the customer to be assessed a transaction fee for a cash withdrawal. The service center can then determine from the GPS locations of the machines in these financial networks, which machine is geographically closest to the cell phone's GPS location. Directions to this nearest automated banking machine are then sent to the cell phone.

A wafer inspection system includes a laser sustained plasma (LSP) light source that generates light with sufficient radiance to enable bright field inspection. Reliability of the LSP light source is improved by introducing an amount of water into the bulb containing the gas mixture that generates the plasma. Radiation generated by the plasma includes substantial radiance in a wavelength range below approximately 190 nanometers that causes damage to the materials used to construct the bulb. The water vapor acts as an absorber of radiation generated by the plasma in the wavelength range that causes damage. In some examples, a predetermined amount of water is introduced into the bulb to provide sufficient absorption. In some other examples, the temperature of a portion of the bulb containing an amount of condensed water is regulate to produce the desired partial pressure of water in the bulb.