The invention discloses an inclined cavity surface two-dimensional 
photonic crystal distribution feedback 
quantum cascade laser and a preparation method. The inclined cavity surface two-dimensional 
photonic crystal distribution feedback 
quantum cascade laser comprises an InP substrate, an InP 
waveguide limit layer manufactured on the InP substrate, an InGaAs lower 
waveguide layer manufactured on the InP 
waveguide limit layer, a strain compensation 
active layer manufactured on the InGaAs lower waveguide layer, an InGaAs upper waveguide layer manufactured on the strain compensation 
active layer, a two-dimensional rectangular 
photonic crystal dot matrix graph manufactured on the InGaAs upper waveguide layer, an InP cover layer manufactured on the InGaAs upper waveguide layer, a 
contact layer manufactured on the cover layer for forming a secondary epitaxial 
wafer, V-shaped double channels etched downward from the surface of the secondary epitaxial 
wafer to the limit layer for forming a slant 
ridge waveguide, a 
silicon dioxide layer which is manufactured on the surfaces of the V-shaped double channels and the 
contact layer, a front 
electrode manufactured on the surface of the etched secondary epitaxial 
wafer, a 
metal layer which is manufactured on the front 
electrode and fills up the two V-shaped double channels and an 
alloy electrode manufactured on the backside of the InP substrate, wherein a current injection window is formed in the middle of the 
silicon dioxide layer on the surface of the 
contact layer.