A 
system comprises a 
processing chamber for maintaining a 
hydrogen plasma at low pressure. The 
processing chamber has a long, wide, thin geometry to favor deposition of thin-film 
silicon on sheet substrates over the chamber walls. The sheet substrates are moved through between ends. A pair of opposing 
radio frequency electrodes above and below the workpieces are electrically driven hard to generate a flat, pancaked 
plasma cloud in the middle spaces of the 
processing chamber. A collinear series of gas 
injector jets pointed slightly up on a 
silane-jet manifold introduce 100% 
silane gas at 
high velocity from the side in order to roll the 
plasma cloud in a coaxial vortex. A second such 
silane-jet manifold is placed on the opposite side and pointed slightly down to further help roll the plasma and maintain a 
narrow band of silane concentration. A silane-concentration monitor observes the relative amplitudes of the spectral signatures of the silane and the 
hydrogen constituents in the roll-vortex plasma and outputs a 
process control feedback 
signal that is used to keep the silane in 
hydrogen concentration at about 6-7%.