A 
wavelength discretely tunable 
semiconductor laser that addresses wide 
wavelength tuning range, is 
mode hopping free, has high output power, has fast 
wavelength switching time, is wavelength locking free and is relatively simple. Four exemplary embodiments disclosed herein utilize a wavelength discretely tunable 
semiconductor laser that comprises a discretely tunable filter and 
laser amplifier. In the first embodiment, the tuning element comprises a pair of 
cascade Fabry-Perot filters, each having a plurality of characteristic narrow transmission passbands that pass only the cavity mode under the 
passband. The spacing between the narrow transmission passbands are slightly different in one filter from the other filter so that only one 
passband from each filter can be overlapped in any given condition over the entire active element 
gain spectral range, thereby permitting lasing only at a single cavity mode passed by the 
cascade double filters. One of the two etalon filters can be made with a plurality of transmission passbands predetermined by industry, application and international standards, making this element an intra-cavity wavelength reference and eliminating further wavelength locking needs for the 
tunable laser. In a second embodiment, one of the two etalons is replaced by a wedge filter. The filter 
optical path change and thus the transmission 
passband shift are achieved by translating the wedge filter in a direction perpendicular to the 
optical axis. In a third embodiment, one of the two etalon filters is replaced by a polarization 
interference filter. The polarization 
interference filter consists of an electro-optically-tunable birefringent 
waveplate, a fixed birefringent 
waveplate, the laser cavity and T.E. polarization light emitted from the 
laser diode. In a fourth embodiment, the laser and wavelength tuning structure are integrated on a 
semiconductor substrate by 
epitaxy processes.