A 
vanadium dioxide front-end advanced 
shutter device. The 
electronic shutter device is designed to protect 
receiver front-ends and other sensitive circuits from HPM pulse events such as HPM weapons, directed energy weapons, or EMPs. The 
shutter incorporates a transition material such as thin-film 
vanadium oxide (VOX) materials that exhibit a dramatic change in resistivity as their temperature is varied over a 
narrow range near a known critical temperature. A high-energy pulse causes ohmic heating in the 
shutter device, resulting in a state change in the VOX material when the critical temperature is exceeded. During the state change the VOX material transitions from an insulating state (
high resistance) to a reflective state (
low resistance). In the insulating state, the shutter device transmits the majority of the 
signal. In the reflective state, most of the 
signal is reflected and prevented from passing into 
electronics on the output side of the shutter device.