A 
laser stimulated 
atom probe for 
atom probe imaging of 
dielectric and low 
conductivity semiconductor materials is disclosed. The 
laser stimulated 
atom probe comprises a conventional atom probe providing a field emission tip and 
ion detector arrangement, a 
laser system providing a laser short laser pulse and synchronous electronic timing 
signal to the atom probe, and an optical 
system for delivery of the laser beam onto the field emitting tip apex. The conventional atom probe is employed in a manner similar to that used for investigation of 
high conductivity materials. However, the 
electric field is held static while the laser is pulsed to provide pulsing of the 
ion emission rate. The laser pulsing is accomplished in a manner similar to prior implementations of 
pulsed laser atom probe 
spectroscopy. The laser pulses provide a trigger 
signal to enable recording the 
time of flight in the atom probe. The laser operates at a 
wavelength in the UV in order to enhance the optical absorption in 
semiconductor or 
dielectric field emission tips. The increased optical absorption allows efficient thermal pumping of the field 
evaporation rate. The tip apex field is also used to 
redshift the 
optical absorption spectra of the 
dielectric or semiconducting material under investigation, further enhancing the optical absorption. Due to the 
enhanced absorption, it is also possible to realize a 
photo ionization mechanism, wherein the laser stimulates electronic transitions from the more extended surface atoms, thereby ionizing the surface atom. The 
laser source is collimated by a collimation lens, reflected using dielectric mirrors, directed onto the sample tip using a focusing lens arrangement, collected from the tip using a collection lens, and directed into a beam stop. The laser 
beam diameter at focus is approximately 3-30 microns, thus, individual emission tips may be scanned from a field of tips illuminated by the laser pulse.