379 results about "Telluride" patented technology

A low temperature chemical route to efficiently produce nanomaterials is described. The nanomaterials are synthesized by intercalating ions into layered compounds, exfoliating to create individual layers and then sonicating to produce nanotubes, nanorods, nanoscrolls and / or nanosheets. It is applicable to various different layered inorganic compounds (for example, bismuth selenides / tellurides, graphite, and other metal complexes, particularly transition metal dichalcogenides compounds including oxygen, sulfur, tellurium or selenium).

A zinc ion-exchanging battery device comprising: (A) a cathode comprising two cathode active materials (a zinc ion intercalation compound and a surface-mediating material); (B) an anode containing zinc metal or zinc alloy; (C) a porous separator disposed between the cathode and the anode; and (D) an electrolyte containing zinc ions that are exchanged between the cathode and the anode during battery charge / discharge. The zinc ion intercalation compound is selected from chemically treated carbon or graphite material having an expanded inter-graphene spacing d002 of at least 0.5 nm, or an oxide, carbide, dichalcogenide, trichalcogenide, sulfide, selenide, or telluride of niobium, zirconium, molybdenum, hafnium, tantalum, tungsten, titanium, vanadium, chromium, cobalt, manganese, iron, nickel, or a combination thereof. The surface-mediating material contains exfoliated graphite or multiple single-layer sheets or multi-layer platelets of a graphene material.

A surface-enabled, metal ion-exchanging battery device comprising a cathode, an anode, a porous separator, and a metal ion-containing electrolyte, wherein the metal ion is selected from (A) non-Li alkali metals; (B) alkaline-earth metals; (C) transition metals; (D) other metals such as aluminum (Al); or (E) a combination thereof; and wherein at least one of the electrodes contains therein a metal ion source prior to the first charge or discharge cycle of the device and at least the cathode comprises a functional material or nano-structured material having a metal ion-capturing functional group or metal ion-storing surface in direct contact with said electrolyte, and wherein the operation of the battery device does not involve the introduction of oxygen from outside the device and does not involve the formation of a metal oxide, metal sulfide, metal selenide, metal telluride, metal hydroxide, or metal-halogen compound. This energy storage device has a power density significantly higher than that of a lithium-ion battery and an energy density dramatically higher than that of a supercapacitor.

A programmable resistance memory element comprising alternating layers of programmable resistance material layers and stabilizing layers. The stabilizing layers may include metallic titanium or a titanium alloy. The stabilizing layers may include a telluride, such as titanium telluride.

The invention provides a preparation method of an active radical with a surface-enhanced Raman scattering (SERS) effect, belongs to the technical field of spectrum detection, and relates to the preparation technology of the SERS active radical, which is rapid, has high sensitivity and performs a low trace detection function. The preparation method is characterized in that firstly, a nano porous silicon columnar array with a large specific surface area is prepared by utilizing a hydrothermal etching technology; afterwards, a nanowire structure of an II-VI group compound semiconductor (such as zinc oxide, titanium dioxide, cadmium sulfide, cadmium selenide, cadmium telluride, and the like) by utilizing a chemical vapor deposition method; and finally, nano particles of precious metal (such as gold, silver, copper and the like) are finally prepared on the nanowire structure by using a chemical reduction method, so as to obtain an active radical material. The preparation method has a wide application prospect in the aspects of clinical biomolecular fast recognition, trace chemical substance detection, biological sample analysis, and the like. The preparation method has the advantages that the preparation process of each material is simple, the condition is mild and the repetition rate reaches 100 percent.

The invention discloses a dual-mode optical coding probe and a preparation method thereof. The probe is in a three-layer core-shell structure, the first-layer core is a gold nano bar, the second-layer shell is silica, the third-layer shell is a cadmium telluride quantum dot, the second-layer shell is wrapped on the outer side of the first-layer core, the third-layer shell covers the outer side ofthe second-layer shell in a sticking mode, and the outer surface of the first-layer core is stuck with Raman molecules which are wrapped by the second-layer shell. The preparation method of the dual-mode optical coding probe comprises the following steps of: 1, preparing an original gold nano bar solution; 2, preparing gold nano bars marked by the Raman molecules; 3, preparing a gold nano bar andsilica metal medium composite nano ball solution; and 4, preparing the dual-mode optical coding probe. The dual-mode optical coding probe has the joint encoding capacity of fluorescence and SERS (Surface Enhanced Raman Scattering), and enhances the optical coding capacity. The preparation method of the dual-mode optical coding probe has a simple process and high repeatability.

The invention provides a binder with barrier properties containing at least one compound containing at least one radiation-curable reactive functional group which is flowable at 18° C. to 100° C. and preferably at 20° C. to 80° C. as component (A), at least one compound containing at least one radiation-curable reactive functional group and at least one COOH group as component (B), and at least one nanoscale filler preferably selected from the group consisting of oxides, nitrides, halides, sulfides, carbides, tellurides, selenides of the second to fourth main group, the transition elements, the lanthanides and / or from the group of polyorganosiloxanes as component (C). The binder is used as a radiation-curing binder in coatings, fillers, sealers or adhesives, particularly in the production of laminate films with barrier properties such as those used in food packaging.

The invention discloses a perform-optimized cadmium telluride thin-film battery and a manufacturing method for the cadmium telluride thin-film battery, wherein the cadmium telluride thin-film battery comprises a substrate and an epitaxy lamination layer; the epitaxy layer lamination sequentially consists of a conducting layer, a window layer, a light-absorbing layer, a back barrier layer and a back electrode from the bottom up; the window layer is of a textured cadmium sulfide thin-film layer; the light-absorbing layer is of a cadmium telluride thin-film layer, the back barrier layer is of a zinc telluride / copper-doped zinc telluride composite layer or a mercury telluride / copper-doped mercury telluride composite thin-film layer, and the back electrode is of one or more of graphite slurry or graphene slurry thin-film layer or copper thin-film layer, nickel thin-film layer, copper-nickel alloy thin-film layer and molybdenum thin-film layer. According to the cadmium telluride thin-film battery provided by the invention, the window area is textured and an optical path of a light-transmitting area is reduced, and thus a light-absorbing capacity is further improved and the better light-trapping effect is realized.

The invention relates to a p-aminophenol imprinted polymer on the surface of a cadmium telluride quantum dot as well as a preparation method and application thereof. The preparation method comprises the following steps: I, synthesizing the cadmium telluride quantum dot CdTeQDs with a fluorescence characteristic and carrying out silanized modification on the surface; II, preparing the p-aminophenol imprinted polymer on the surface of the cadmium telluride quantum dot; and III, removing template molecules to obtain the p-aminophenol imprinted polymer on the surface of the cadmium telluride quantum dot CdTe@SiO2@MIP. Test results show that the limit of detection of CdTe@SiO2@MIPsQDs synthesized by the method to template molecules can reach 0.02 mu m. Fluorescence detection is quickly and simply carried out by using a fluorospectro photometer in a time-saving manner.

A surface-enabled, metal ion-exchanging battery device comprising a cathode, an anode, a porous separator, and a metal ion-containing electrolyte, wherein the metal ion is selected from (A) non-Li alkali metals; (B) alkaline-earth metals; (C) transition metals; (D) other metals such as aluminum (Al); or (E) a combination thereof; and wherein at least one of the electrodes contains therein a metal ion source prior to the first charge or discharge cycle of the device and at least the cathode comprises a functional material or nano-structured material having a metal ion-capturing functional group or metal ion-storing surface in direct contact with said electrolyte, and wherein the operation of the battery device does not involve the introduction of oxygen from outside the device and does not involve the formation of a metal oxide, metal sulfide, metal selenide, metal telluride, metal hydroxide, or metal-halogen compound. This energy storage device has a power density significantly higher than that of a lithium-ion battery and an energy density dramatically higher than that of a supercapacitor.

The invention relates to a back contact electrode in a CdTe membrane solar cell structure. The electrode comprises a transparent conductive glass layer, a window layer, a light absorbing layer and a blocking layer and is characterized in that: a graphene membrane layer serving as the back contact electrode is prepared on the back face of an anti-insertion layer; and the thickness of the graphene layer is between 0.1 mu m and 1 millimeter. A preparation method of the back contact electrode comprises preparation of the transparent conductive glass layer, preparation of the window layer, preparation of the light absorbing layer and preparation of the blocking layer and is characterized by comprising the following steps of: adding an adhesive into graphene so as to prepare graphene slurry; and preparing the graphene slurry into a graphene layer. The back contact electrode and the preparation method have the advantages that: a process adopted by the preparation method is compatible with the conventional CdTe cell process, and a new measure for realizing a low-cost, high-performance and large-scale CdTe cell is provided.

The invention relates to a plumbum telluride (PbTe) or graphene nanocomposite material and a preparing method thereof. The plumbum telluride (PbTe) or graphene nanocomposite materiall is characterized by the following steps: using a compound of plumbum (Pb) and a compound of tellutide (Te) as raw materials, respectively dissolving the two compounds into deionized water according to the stoichimetric ratio of the plumbum telluride (PbTe), preparing a solution containing plumbum and a solution containing tellutide (Te) with same concentration from 0.01 mole per liter to 0.1mole per liter; dissolving graphite oxide into the deionized water, performing ultrasound for 0.5 hours to 2 hours, preparing a graphite oxide solution with a concentration from 0.5 milligram per mini liter to 2 milligrams per mini liter; adding the graphite oxide solution into the solution containing plumbum, performing ultrasound for 0.5 hours to 2 hours, adding the solution containing tellutide, adjusting potential of hydrogen (pH) to be 9 to 12 by adding strong alkali, adding reducing agent, sealing membrane, placing in warm water bath, reacting with stirring for 8 hours to 24 hours at the temperature between 60DEG C and 100DEG C, collecting products, washing by deioniaed water, drying, and obtaining the plumbum telluride (PbTe) or graphene nanocomposite material; and adding the graphite oxide at 1%-30% of the theoretical mass of the plumbum telluride (PbTe). The plumbum telluride (PbTe) or graphene nanocomposite material and thepreparing method thereof has the advantages of simple technology, low cost and the like and having small plumbum telluride (PbTe) particles with 20 nanometers to 60 nanometers and wide application prospect.

A method of p-type doping cadmium telluride (CdTe) is disclosed. The method comprising the steps of, (a) providing a first component comprising cadmium telluride (CdTe) comprising an interfacial region, and (b) subjecting the CdTe to a functionalizing treatment to obtain p-type doped CdTe, said functionalizing treatment comprising a thermal treatment of at least a portion of the interfacial region in the presence of a first material comprising a p-type dopant, and of a second material comprising a halogen. A method of making a photovoltaic cell is also disclosed.

An embodiment of the invention provides a detection system and a detection method and aims to effectively improve the problem that, in the prior art, the detection system based on a scintillator detector has limited applicable range. The detection system comprises a zinc cadmium telluride linear-array detector, a processor and a plurality of read-out circuits; the zinc cadmium telluride linear-array detector comprises a zinc cadmium telluride detector which comprises a plurality of pixel units; among the pixel units, a gap is formed between every two pairs of pixel units, and each pixel unit corresponds to one read-out circuit; the zinc cadmium telluride linear-array detector is used for converting X-ray energy detected, into electrical signals; the read-out circuits are used for acquiring the electrical signals corresponding to the pixel units and read counting of the electrical signals the amplitude of each which meets a preset threshold so as to obtain a count value; the processor is used for analytical imaging. The detection system is simple in structure and ingenious in design and high in ray conversion efficiency, has applicable range evidently widened and is convenient to implement and easy to popularize and apply.

The invention relates to a detection method for the content of adenosine in a biological sample. An adenosine probe is formed by mixing ferriferrous oxide magnetic nano-particles with surfaces modified by an adenosine aptamer segment 1 and cadmium telluride quantum dots with surfaces modified with an adenosine aptamer segment 2; the adenosine probe and the adenosine are paired by an alkali group to form an adenosine sandwiched structure, and the adenosine sandwiched structure is separated from the biological sample; the content of the adenosine is quantified by applying ion exchange effect of silver ions and cadmium ions in the cadmium telluride quantum dots in the adenosine sandwiched structure; the method has the characteristics of very high sensitivity, accuracy and precision.

The invention relates to a preparation method and application of a multifunctional nano siRNA (Small Interfering Ribonucleic Acid) carrier system which integrates tumor targeting, pH sensitivity, visualization and the like. The core of the siRNA nano carrier system consists of cadmium telluride quantum dots. A nano carrier shell consists of a tumor targeted gene, a 9 poly-l-arginine peptide chain and PEG (Polyethylene Glycol). The siRNA nano carrier is good in biocompatibility, strong in tumor targeting and high in cell transfection efficiency, and has the characteristics of high quantum yield, strong optical stability, lossless in-position real-time monitoring and the like, so that the system is suitable for being used as a nano transmission system for in vivo gene therapy of tumors.

The invention discloses a preparation method of a photo-induced chemical paper chip for detecting expression of polysaccharides on surfaces of cancer cells. The preparation method comprises the following steps: designing lyophobic wax printing patterns of the paper chip by using Adobe illustrator CS4 software; printing the paper chip by using a wax printer; printing a working electrode, a reference electrode and a counter electrode by using a screen printing technique; growing gold nanoparticles in a working region, then connecting photoelectric material zinc oxide, cadmium telluride quantum dots and gold-grafted meso-porous silicon, modifying HRP-mdsDNA, and providing a built-in light source and binding sites of recognition cells for a photo-induced chemical system; and finally, adding a polysaccharides inhibitor, and detecting expression of the polysaccharides on the surfaces of the tumor cells by change of photocurrent response.

An electron beam lithography system has an electron gun including at least one laser that is operable in a first mode to generate electrons for lithography. The electron beam lithography system is operable in a second mode to regenerate the photocathode of the electron gun by application of the laser. The photocathode includes a layer of cesium telluride.

The invention belongs to the technical field of the preparation of the semiconductor material and particularly discloses a method for preparing copper-sulfur compound nano-crystals with controllable morphology based on a chemical vapor deposition method. The method adopts the chemical vapor deposition method, the temperature and pressure of the reaction system and the product collection area are controlled to prepare different morphologies of copper-sulfur compounds such as copper sulfide nano-crystals, copper sulfide nano-rods, copper sulfide nano-sheets and copper sulfide nano-flower-cluster. The method comprises the following specific steps: (1) injecting a solid precursor; (2) controlling the pressure and temperature of the system and injecting a gaseous precursor; and (3) collecting the product. The copper-sulfur compounds prepared by the method are characterized by good monodispersity, high sample purity and the like. The method can also be used to prepare other metal semiconductors such as sulfides, selenides and tellurides; and by changing the reaction conditions of the system, the morphology of the product is regulated and then applied in fields such as the preparation of functional semiconductor elements, photoelectric conversion and catalysis.

Provided are methods and apparatuses for depositing barrier layers for blocking diffusion of conductive materials from conductive lines into dielectric materials in integrated circuits. The barrier layer may contain copper. In some embodiments, the layers have conductivity sufficient for direct electroplating of conductive materials without needing intermediate seed layers. Such barrier layers may be used with circuits lines that are less than 65 nm wide and, in certain embodiments, less than 40 nm wide. The barrier layer may be passivated to form easily removable layers including sulfides, selenides, and / or tellurides of the materials in the layer.

The invention relates to the technical field of cadmium telluride semiconductor film preparation, and relates to a method for electrochemical preparation of a cadmium telluride semiconductor film under an alkaline water phase condition; a three-electrode electrochemical deposition system is adopted; a CdTe film is electrochemically deposited on a deposition substrate from an alkaline precursor deposition solution at a temperature of 20 DEG C-80 DEG C and a cathodic deposition potential of from -1.0 V to -2.0 V; and the crystallization quality of the film is improved by performing annealing treatment of the deposited CdTe film. A high cathodic potential is adopted to avoid the problem of cracking caused by film polycondensation of amorphous CdTe during later thermal crystallisation treatment, wherein the amorphous CdTe is formed at a low cathodic potential; a weak alkaline solution is adopted to reduce the corrosion of the deposition substrate by the electrolyte solution; the H+ ion concentration of the weak alkaline solution is low, and thus less H2 gas is generated during the electrodeposition process, which avoids the problem of acicular pores caused by hydrogen generation during the deposition process, and greatly improves the film density and photoelectric properties.

The invention belongs to the field of nano material preparation, and in particular discloses a platinum telluride two-dimensional material, i.e., platinum telluride nanosheets. The invention also provides a preparation method of the platinum telluride two-dimensional material; the method comprises the steps of enabling tellurium powder and platinum powder to be volatilized at a temperature not lower than 410 DEG C and a temperature of 1000-1170 DEG C respectively, and enabling the volatilized tellurium and platinum to be deposited on the surface of a substrate by means of chemical vapor deposition under the conditions that the carrier gas flow is 50-400sccm and the temperature is 350-720 DEG C so as to obtain the platinum telluride nanosheets. The invention also relates to the platinum telluride two-dimensional material prepared by the method, optical devices prepared from the platinum telluride two-dimensional material, and especially comprises application of the platinum telluride two-dimensional material in PtTe2 field effect transistors. The platinum telluride nanosheets are good in morphology and are hexagonal and triangular, have thicknesses of 2-40nm and sizes of 1.5-52mu m,and are good in crystallinity; the preparation method is simple and easy to implement.

A thermoelectric material comprises core-shell particles having a core formed from a core material and a shell formed from a shell material. In representative examples, the shell material is a material showing an appreciable thermoelectric effect in bulk. The core material preferably has a lower thermal conductivity than the shell material. In representative examples, the core material is an inorganic oxide such as silica or alumina, and the shell material is a chalcogenide semiconductor such as a telluride, for example bismuth telluride. A thermoelectric material including such core-shell particles may have an improved thermoelectric figure of merit compared with a bulk sample of the shell material alone. Embodiments of the invention further include thermoelectric devices using such thermoelectric materials, and preparation techniques. The use of core-shell nanoparticles allows highly uniform nanocomposites to be formed, and embodiments of the invention also includes other materials and devices using core-shell particles.

The invention relates to a universal preparation method for synthesizing a carbon-coated nickel metal compound with various morphologies as a sodium ion battery negative electrode material by utilizing a metal organic framework design. The method comprises the following steps: dissolving an organic ligand, a nickel source and a surface dispersant into a mixed solvent according to a certain ratio,and controlling hydrothermal reaction time to generate nickel-containing metal organic frameworks with different morphologies (solid spheres, core-shell spheres and hollow spheres); the carbon-coatednickel-containing compounds (nickel oxide, nickel phosphide, nickel sulfide, nickel selenide and nickel telluride) with the shape similar to that of a template are synthesized by taking the frameworksas the template and adjusting an anionic ligand and utilizing an ion exchange strategy. The preparation method has the advantages that the morphology is adjustable; the components are rich; conditions are easy to control; the operation is simple; the conversion efficiency is high; the synthesis method has universality and can be expanded to synthesis of other types of carbon-coated metal compounds; and the product has high specific capacity and good rate capability.

The invention discloses a method for detecting the content of chlortoluron in farmland water by using a fluorescence carbon point and cadmium telluride quantum dot energy transferring technology. According to the method, a fluorescence carbon point is used as an energy transferring donor and a cadmium telluride quantum dot is used as an acceptor to form an energy transferring system with stable performance; the fluorescence carbon point is used for transferring energy to the cadmium telluride quantum dot so as to cause fluorescence enhancement of the cadmium telluride quantum dot. The chlortoluron is added and electrons on the surface of the cadmium telluride quantum dot are transferred to the chlortoluron to be in non-radiation combination with the chlortoluron, so that the fluorescent light of the cadmium telluride quantum dot is regularly quenched. The concentration of the chlortoluron has a good linear relation with a fluorescence quenching degree (F0 / F) in a range of 0.05-12.0 micrograms / liter; a linear regression equation is F0 / F=1.0+0.138c and the linearly dependent coefficient r is equal to 0.9979; the detection limit of the method is 0.017 microgram / liter. The method disclosed by the invention is simple, high in sensitivity and good in selectivity; the detection of the chlortoluron in a farmland water sample is very convenient and rapid.

The invention discloses a method for preparing bifluorescence emission nano-probes in a post-encoding mode. A fluorescent probe precursor which can be used for post-encoding is synthesized by taking cadmium telluride quantum dots and gold nanoclusters as fluorescence encoding elements and silicon balls as a carrier of the encoding elements according to the fluorescent characteristics of the quantum dots and the gold nanoclusters; and then an optical regulator is added into the precursor in a post-encoding mode to prepare the bifluorescence emission nano-probes. The fluorescence intensity ratio of two encoding elements in the obtained bifluorescence emission nano-probes is relatively large, so that the observation on the change of a fluorescent signal at relatively high resolution is facilitated. The method for preparing the bifluorescence emission nano-probes comprises the following steps of: preparing the quantum dots, wrapping silicon on the quantum dots, synthesizing the gold nanoclusters, synthesizing fluorescent probe precursor microspheres, and preparing the bifluorescence emission nano-probes. The invention has the advantages that the synthetic method is simple; the encoded probes have the irreversibility; the reproducibility of different batches of probes is high; and an effective method for preparing a large number of bifluorescence emission nano-probes which can be used for fluorescent imaging is provided.

The invention discloses a cadmium telluride quantum dot grafted graphene-carbon nanotube composite thin film optical switch material and a preparation method thereof. The optical switch material consists of a graphene-carbon nanotube composite thin film with negative charges, diallyldimethylammonium chloride with positive charges and cadmium telluride quantum dots with negative charges, wherein the graphene-carbon nanotube composite thin film is used as a substrate; the diallyldimethylammonium chloride is electrostatically self-assembled on the substrate; and the diameters of the cadmium telluride quantum dots are in the range of 4 to 6nm. The preparation method disclosed by the invention has a simple process. The quantum dots of the obtained cadmium telluride quantum dot grafted graphene-carbon nanotube composite thin film optical switch material are uniformly dispersed on the film. The obtained cadmium telluride quantum dot grafted graphene-carbon nanotube composite thin film optical switch material has good environmental suitability and stable performance, has the advantages of optical and electric performances capable of being regulated and controlled by changing the type of the quantum dots and the amount of the quantum dots of a load, high photoelectric conversion rate, and the like, and is expected to be used for preparing a photoelectric conversion device with rapid photoresponse performance.

The invention discloses a three-junction laminated thin film solar cell, and belongs to the technical field of solar photovoltaics. The thin film solar cell aims at improving photoelectric conversion efficiency of the thin film cell and allowing the photoelectric conversion efficiency of the thin film cell to be approximate to that of a crystal cell. The thin film solar cell is characterized in that a top cell is an amorphous silicon solar cell, has an intrinsic layer energy gap of 1.7-1.8eV, and absorbs blue sunlight; the middle cell is a cadmium telluride cell, has an energy gap of about 1.45eV, and absorbs green light; and the bottom cell is a copper indium gallium selenide cell, has an energy gap of about 1.05eV, and absorbs red light. A middle layer is introduced, an optical path and optical trap structure is added, the light absorption efficiency is improved, the dividing precision can be improved by a step-by-step dividing method, the series connection and short circuit in a cell module are reduced, the product cost is lowered, and the reject rate is reduced.

The invention relates to a cadmium telluride / bismuth telluride integrated nano structure material with photo-thermal synergic electric generation. The preparation method comprises the following: depositing a cadmium telluride nanorod layer on a conducting surface of a conducting glass substrate, and depositing a tellurium-doped bismuth telluride layer on the surface of the cadmium telluride nanorod layer to constitute the cadmium telluride / bismuth telluride integrated nano structure material. The material can simultaneously convert light and heat in the solar spectrum into electric power, thereby implementing the effect of photo-thermal synergic utilization. The invention also discloses a preparation method of the cadmium telluride / bismuth telluride integrated nano structure material.

A surface-enabled, metal ion-exchanging battery device comprising a cathode, an anode, a porous separator, and a metal ion-containing electrolyte, wherein the metal ion is selected from (A) non-Li alkali metals; (B) alkaline-earth metals; (C) transition metals; (D) other metals such as aluminum (Al); or (E) a combination thereof; and wherein at least one of the electrodes contains therein a metal ion source prior to the first charge or discharge cycle of the device and at least the cathode comprises a functional material or nano-structured material having a metal ion-capturing functional group or metal ion-storing surface in direct contact with said electrolyte, and wherein the operation of the battery device does not involve the introduction of oxygen from outside the device and does not involve the formation of a metal oxide, metal sulfide, metal selenide, metal telluride, metal hydroxide, or metal-halogen compound. This energy storage device has a power density significantly higher than that of a lithium-ion battery and an energy density dramatically higher than that of a supercapacitor.