122results about How to "Improve photoresponsivity" patented technology

Disclosed are a responsivity-enhanced ZnO-based photoconductive detector and a preparation method thereof. The responsivity-enhanced ZnO-based photoconductive detector comprises a substrate and a ZnO film on the substrate. The ZnO film is coated with Ag nano-particles, fork-finger-shaped Al electrodes are deposited on the Ag nano-particles, and the Ag nano-particles are exposed among adjacent fork fingers of the fork-finger-shaped Al electrodes; or the fork-finger-shaped Al electrodes are deposited on the ZnO film, the Ag nano-particles are filled among the adjacent fork fingers of the fork-finger-shaped Al electrodes, and the Ag nano-particles are arranged on the ZnO film through spin-coating. The method includes the steps that the ZnO film is formed on the substrate through RF magnetron sputtering, then the Ag nano-particles are arranged on the ZnO film through spin-coating, or the fork-finger-shaped Al electrodes are deposited on the ZnO film; the responsivity-enhanced ZnO-based photoconductive detector can be obtained by depositing the fork-finger-shaped Al electrodes on the Ag nano-particles or arranging the Ag nano-particles on a sample surface with the fork-finger-shaped Al electrodes through spin-coating. According to the responsivity-enhanced ZnO-based photoconductive detector and the preparation method thereof, the surface plasma resonance effect of the Ag nano-particles is used for improving light absorbing ability of the detector, and therefore responsivity of the obtained photoconductive detector in an ultraviolet light area can be greatly improved.

The invention discloses a novel high-performance light modulation thin film transistor based on a quantum dot doped gate insulating layer. A preparation method thereof comprises the following steps: depositing an active layer and a source and drain electrode contact layer on a base in sequence; spinning quantum dots and organic optical cement on the active layer to prepare the gate insulating layer; etching via holes for connecting the contact layer with active and drain electrodes on the gate insulating layer; and finally preparing a transparent electrode on the gate insulating layer, and etching the transparent electrode as the drain electrode, gate electrode and source electrode of a plane. Besides the three modulation electrodes of a traditional source and drain gate, the thin film transistor device disclosed by the invention can be taken as a fourth end modulation electrode through incident light. The light modulation thin film transistor with photoelectric detection and signal read functions is prepared by using the thin film transistor gate insulating layer doped with the quantum dots, so that the structure and preparation technology of the light modulation thin film transistor are greatly simplified, the dimensions of the device are shortened, and the photoelectric detection performance is improved.

The invention discloses a graphene-phosphorus heterojunction photodetector and a manufacturing method, which belong to the technical field of optical communication. the graphene-phosphorus heterojunction photodetector comprises a silicon substrate, a silicon dioxide layer, a plurality of parallelly-arranged phosphorus layers and a graphene layer covering each phosphorus layer sequentially arranged from bottom to top in an overlapped mode, wherein the phosphorus in each phosphorus layer and the graphene in the graphene layer form a heterojunction; the graphene layer covers the phosphorus layer completely; an electrode is arranged above the edge of the graphene layer; and the electrode extends above the area where the phosphorus layer and the graphene layer are overlapped. In order to solve the above technical problem, very high photoelectric conversion efficiency in the optical communication band can be realized, the manufacturing method is simple, the cost is low, and the repeatability is good.

The invention provides a photoelectric detecting structure and a preparation method thereof. The photoelectric detecting structure comprises the components of a first scintillator layer which is usedfor absorbing X ray with relatively low energy and converting the X ray to visible light; a second scintillator layer which is used for absorbing the X ray with relatively high energy and converting the X ray to the visible light; and a first visible light sensor which is arranged between the first scintillator layer and the second scintillator layer and is used for converting the visible light that penetrates through the first scintillator layer and the visible light that is reflected by the second scintillator layer to electric charges and storing electric charges into the first visible light sensor. A substrate is supplied. The first visible light sensor is formed on the substrate through a semiconductor process in a layer-by-layer manner. The first scintillator layer is formed on the first surface of the first visible light sensor, and then the second scintillator layer is formed on the second surface of the first visible light sensor. The photoelectric detecting structure and thepreparation method have advantages of relatively high image definition on the condition of high-energy ray and higher photoresponsivity.

The invention discloses a mid-infrared light detector and a preparation method thereof. The mid-infrared light detector comprises a monocrystalline silicon substrate, an insulating layer, a continuousgraphene layer, a quantum dot layer and a nano grating contact electrode covering the quantum dot; the monocrystalline silicon substrate, the insulating layer, the continuous graphene layer, the quantum dot layer and the nano grating contact electrode covering the quantum dots are uniformly distributed on a PVC substrate. The mid-infrared light detector is composed of a periodic nano grating array, which has a coupling effect on incident light beams that can effectively overcome the defect of weak light absorption of a graphene photoelectric detector, and the prepared photoelectric detector has obvious absorption on the spectrum of a mid-infrared band and has a higher light response rate.

The invention discloses a pulsimeter based on a graphene edge embedded type nano-film photoelectric sensor. The pulsimeter comprises an infrared light source unit for fixing a finger, to be detected, of a user and emitting infrared light of a specified wavelength to penetrate through the finger of the user; a photoelectric sensor unit for collecting an infrared light signal and generating a photoelectric signal according to the infrared light signal, wherein a graphene edge embedded type nano-film is grown on the surface of a silicon substrate of the photoelectric sensor unit through ECR plasma irradiation; a rectifying and amplifying unit for rectifying and amplifying the photoelectric signal to obtain a rectified and amplified signal; and a signal acquisition unit for acquiring and storing the rectified and amplified signal. According to the pulsimeter, by capturing photogenerated electrons with a boundary quantum well, recombination of photogenerated electron-hole pairs can be reduced greatly, the photoresponse rate can be increased, and human fingertip pulse signals can be measured more accurately and stably.

The invention discloses a graphene-silicon heterojunction photoelectric detection chip and a preparation method thereof. The detection chip includes a silicon substrate, a frame-shaped SiO2 insulatinglayer on the boundary around the silicon substrate, an interface passivation layer on the silicon substrate, a graphene layer on the interface passivation layer, and a metal nanostructure layer on the graphene layer. By introducing the metal nanostructure to the chip structure, on one hand, the light absorption efficiency of the graphene-silicon heterojunction can be significantly improved and the light responsivity and linear light response range of devices can be improved through the localized surface plasmon resonance characteristic of the metal nanostructure. On the other hand, through the ultrafast photoelectric conversion process of the metal nanostructure under light excitation, the spectral response rate and frequency characteristic of the chip can be significantly improved. In addition, by making use of different spectrum resonance characteristics of metal nanoparticles of different materials and sizes, the specific spectrum enhancement characteristic of the detection chip can be significantly improved.

The invention provides a photodetector and a manufacturing method thereof, wherein a photodetector with a vertical structure is manufactured by sequentially arranging a first electrode, a hole transport layer, a photosensitive active layer containing perovskite, an electron transport layer and a second electrode on a substrate from bottom to top. A PN junction is formed between the perovskite in the photosensitive active layer and the electron transport layer, thus the built-in electric field is constructed, thereby separating holes and electrons generated by the photosensitive active layer from each other only by applying a bias voltage of 0 V between the first electrode and the second electrode, The low driving voltage of the photodetector is realized, which is beneficial to the reduction of the power consumption of the product, and the hole transport layer and the electron transport layer are arranged above and below the photosensitive active layer respectively. The vertical arrangement mode can accelerate the transmission of holes and electrons, thereby increasing the photocurrent of the photodetector and further improving the photoresponsivity of the device. At that same time,each layer of the photodetector can be a flexible material to meet the requirements of portability and versatility.

The invention provides a photoelectric detector based on graphene planar junction. The photoelectric detector based on graphene planar junction comprises a substrate, two ends of the substrate surface are respectively provided with a metal electrode, a graphene integral band is connected between the metal electrodes, one end of the graphene integral band is a wide band part, and the other end of the graphene integral band is a narrow band part. For the graphene planar junction type photoelectric detector provided by the invention, difference of seebeck coefficients of wide and narrow bands is caused by means of difference of graphene band energy band structures of different width, and thus, zero-bias photoelectric detection is realized based on optical thermo-electric effect. Device structures and technical processes in the invention are simple, a lengthy graphene chemical doping technology is avoided, and a parallel structure can be realized for improving optical responsivity; based on the infrared absorption characteristics of graphene, the photoelectric detector provided by the invention can be used for mid and far-infrared and terahertz photoelectric detection, and is a very practical photoelectric detector structure.

An optically driven actuator includes a crosslinked polymer obtained by crosslinking at least part of the side chains of a condensation polymer having, on its backbone chain, a photoisomerizable group that undergoes structural change under optical stimulation. The crosslinked polymer deforms reversibly depending on optical stimulation, thereby performing the function of an actuator.

The invention discloses a production method of a single-crystal silicon carbide nanowire high-sensitivity purple-light photoelectric detector. The method includes the steps of firstly, producing a matrix; secondly, producing nano materials; thirdly, building the photoelectric detector, to be more specific, ultrasonically dispersing SiC nanowires obtained in the second step in anhydrous ethanol solution to form nanowire dispersing liquid, and moving the nanowire dispersing liquid to a cleaned Si / SiO2 substrate; processing the surface of the substrate with dispersed nanowires to obtain interdigital electrode patterns, evaporating a metal thin film on the surface of the electrode patterns, stripping to obtain an interdigital Cr / Au electrode array, and connecting two electrodes with the single nanowire to form the photoelectric detector. The detector produced by the method can respond to purple light under a high-temperature environment, and high response efficiency is achieved.

The invention provides a liquid crystal spatial light modulator, belongs to the technical field of liquid crystal devices. According to the liquid crystal spatial light modulator, on the basis of the original photovoltaic and reflective type liquid crystal spatial light modulator, the traditional photosensitive layer is upgraded into a novel photosensitive layer of a composite thin film structure formed by an amorphous silicon thin film and a tin silicon alloy thin film deposited on the amorphous silicon thin film, and the spectral response range through the voltage regulating devices on the two ends of the photosensitive layer is achieved, and on the basis that the tin silicon alloy thin film has the property that when the tin content reaches a certain value the film can be transformed into a direct band-gap semiconductor from an indirect band-gap semiconductor, the image resolution and light sensitivity and responsiveness of the device can be improved. In addition, the liquid crystal spatial light modulator is simple in preparation process, easy to operate, controllable in process parameters, and favorable to industrial production manufacturing.

The invention relates to a photovoltaic near-infrared and middle-infrared double-color detector for an Si-based three-dimensional Ge quantum dot crystal. The detector structure is a photovoltaic light-emitting diode structure of a PIN or NIP structure, wherein the three-dimensional Ge quantum dot crystal serves as a light absorption region. Strong near-infrared and middle-infrared band light absorption is formed by using efficient ground state micro-strip interband transition and valence band micro-strip sub-band interband transition inside the three-dimensional Ge quantum dot crystal, so that efficient double-color detection for near-infrared and middle-infrared wave bands is realized simultaneously, and the photovoltaic near and middle infrared double-color detector has wide application prospect in the technical field of infrared sensing.

The invention discloses a cellulose base flexible zinc oxide ultraviolet photoelectric detector and a preparation method therefor. The method specifically comprises the steps: taking a high-haze transparent cellulose film as a substrate, growing a zinc oxide semiconductor film through a magnetron sputtering method, enabling an interdigital electrode mask to be closely attached to the zinc oxide semiconductor film, growing a metal thin layer on the interdigital electrode mask and a zinc oxide semiconductor film interdigital electrode mask which is not covered by the interdigital electrode mask through an electron beam evaporation method, manufacturing a metal electrode on the zinc oxide semiconductor film after the interdigital electrode mask is removed, and finally preparing and obtaining the cellulose base flexible zinc oxide ultraviolet photoelectric detector. According to the invention, the high-haze transparent cellulose film is taken as the substrate for growing the zinc oxide semiconductor film, and the flexible ultraviolet photoelectric detector is prepared. The detector has the feature response for the ultraviolet light, and is flexible and bendable. The high-haze transparent cellulose substrate can achieve the light tripping effect, thereby improving the responsivity of the ultraviolet photoelectric detector.

The invention relating to the field of light detecting technology discloses an ultra-short-channel metal-semiconductor-metal type photodetector and a manufacturing method thereof. A photodetector channel is constructed by using two-dimensional molybdenum disulfide in a vertical direction; and with a tunneling current generated by an ultra-short channel, light in different wavelength ranges is detected. The optical dark current is large, the light response speed is fast, and the light response is high. The detector is composed of an insulating substrate, a bottom electrode formed on the insulating substrate, a channel completely covering the bottom electrode, and a top electrode arranged above the channel. The insulating substrate is a one of a polyethylene glycol terephthalate film, a sapphire substrate and a silicon wafer with an oxide layer; the electrode is a metal electrode; and the channel is made of the two-dimensional molybdenum disulfide material. The channel has the width of 0.7 to 2.2nm. The ultra-short-channel metal-semiconductor-metal type photodetector for optical detection has the characteristics of high flexibility and transparency.

The invention discloses preparation of rhenium sulfide and a cadmium sulfide / rhenium sulfide composite material. A two-dimensional monolayer rhenium disulfide is grown on a mica sheet substrate through an ordinary pressure chemical vapor deposition method with sulfur powder as a sulfur source and rhenium trioxide as a rhenium source under protection of an inert gas and a water-assisting precondition; by means of a secondary growth method, cadmium sulfide particles are again deposited on the mica sheet substrate with the two-dimensional monolayer rhenium disulfide, and a CdS / ReS2 composite material with the cadmium sulfide particles growing on the surface of the rhenium sulfide is obtained. The preparation of the rhenium sulfide and the cadmium sulfide / rhenium sulfide composite material have the advantages that the process is simple, low-cost, rapid, highly efficient and controllable, and the high-quality single-layer rhenium sulfide is prepared. The CdS / ReS2 composite material obtained by depositing the cadmium sulfide on the two-dimensional material rhenium sulfide has more excellent photoelectric properties and has a high response rate while being applied to a photoelectric device.

The invention belongs to the technical fields of materials and photoelectric devices, and specifically to a single selenium micron tube photoelectric detector and a preparation method and a responsivity reinforcement method therefor. According to the preparation method, an evaporation-transfer-growth method is adopted; the t-selenium hexagonal micron tube structure with the length of 0.1-5mm and the width of 1-30[mu]m is synthesized; the prepared micron tubes are separated to obtain the single selenium micron tube; and then the single selenium micron tube is transferred to a solid substrate to establish the photoelectric device. The single selenium micron tube photoelectric device has an excellent ultraviolet-visible range photoelectric detection performance and millisecond-level rapid response time; Au nanoparticles are sputtered on the surface of the selenium micron tube photoelectric device by a small-sized ion sputtering device; the improvement of the responsivity from 300nm to 700nm is realized through surface plasma resonance; the complex process of the conventional photoelectric device is overcome, and the rapid establishment of the photoelectric device can be realized; and meanwhile, the broad spectrum responsivity reinforcement method by using the Au nanoparticles can be widely applied to the broad spectrum detectors.

The invention provides a novel photodetector based on perovskite and a manufacturing method thereof. A novel photodetector with a vertical structure is fabricated by sequentially arranging a first electrode, a hole transport layer, a photosensitive active layer containing perovskite, an electron transport layer and a second electrode on the substrate from bottom to top. The photosensitive active layer is a novel perovskite with a two-dimensional perovskite and a three-dimensional perovskite cross network structure produced by adding a halide salt and an organic solvent into a two-dimensional perovskite precursor solution. The two-dimensional perovskite and the three-dimensional perovskite cross network structure increase the crystallinity of the novel perovskite, Carrie lifetime prolongation, Moreover, the novel perovskite possesses the characteristics of both in-plane and inter-plane transport of carriers, and the novel photodetector containing the novel perovskite possesses larger photocurrent and higher photoresponse, and exhibits excellent air stability and long-term cycling stability.

The invention discloses a photodetector based on a Van der Waals heterojunction and a preparation method thereof. The photodetector comprises an optical fiber, a Van der Waals heterojunction structure, a pair of fiber side wall metal electrodes and a pair of fiber end face metal electrodes. The fiber side wall metal electrodes and the fiber end face metal electrodes are connected. The Van der Waals heterojunction structure is located on the end face of the optical fiber, and comprises a tungsten disulfide film, a molybdenum disulfide film and a graphene film from bottom to top. A pair of fiberend face metal electrodes is connected with the graphene film on both ends of the Van der Waals heterojunction structure. The photodetector prepared by the invention can detect weak light in the near-infrared band and strong light in the full band, has the advantages of good stability and anti-interference ability, and has a wide application prospect in the fields of optical communication and light sensing.

The invention relates to the field of graphene photodetectors, in particular to a PIN structure graphene photodetector with adjustable Fermi level and a preparation method thereof; the PIN structure graphene photodetector with adjustable Fermi level comprises a substrate, a metal layer, an insulating layer, a P-doped graphene layer, a dielectric layer and an N-doped graphene layer sequentially from bottom to top; gate voltage is applied to the metal layer; the insulating layer has a source electrode, a drain electrode and a first electrode, and the source electrode and the drain electrode are arranged on two sides of the first graphene layer respectively and are both connected to the first graphene layer; the first electrode and the second electrode are arranged on two sides of the second graphene layer respectively, and the first electrode is connected to the second graphene layer; the P-doped graphene layer, the dielectric layer and the N-doped graphene layer form a PIN structure; the first graphene layer, the source electrode, the drain electrode, the insulating layer and the metal layer form a field-effect transistor. The field-effect transistor made with graphene material is combined with the PIN structure to form the photodetector, providing high-response quick detection under ultraviolet-to-infrared broad band.

The invention belongs to the photoelectric device technology field and especially discloses a manufacturing method of a two-dimensional ordered TiO2 nanometer well film and an application in a self-energized photoelectric device. In the invention, firstly, a two-dimensional ordered TiO2 nanometer well film is manufactured; and then the manufactured TiO2 nanometer well film is taken as a substrate so as to manufacture a heterojunction compound with inorganic-substance layered NiO organic semiconductor polyaniline; and a self-energized photoelectric detector is constructed. The method comprises the following steps of anodic oxidation, physical stripping, heating calcinations, low temperature hydrothermal treatment, in situ polymerization and the like. In the invention, a complex and expensive manufacturing technology of the photoelectric device is avoided and rapid construction of a large-scale device can be realized; a photovoltaic effect of a p-n junction is used, under zero-bias driving, photon-generated carriers are rapidly separated under a built-in potential effect, self-energized performance of the device is realized and a light current is stable and a response speed is fast; and for ultraviolet light, good selection performance is possessed, and the photoelectric detector can be served as an energy-saving high frequency detector and a high-frequency photoelectric converter and can be applied in the fields of optical communication, military, medical treatment, photoelectric storage and the like.

The invention relates to the technical field of two-dimensional materials, in particular to a preparation method of a black phosphorus film. The preparation method is characterized in that a growth substrate, a phosphorus-containing precursor and a mineralizer are placed in a vacuum closed reaction chamber, wherein the growth substrate and the phosphorus-containing precursor are placed in different areas in the vacuum closed reaction chamber; the reaction chamber is heated and subjected to heat preservation, so that the mineralizer reacts with part of phosphorus-containing gas from the phosphorus-containing precursor, and an induced nucleating point or an induced nucleating layer for inducing black phosphorus crystallization is formed on the growth substrate; and the temperature of the reaction chamber is reduced, the phosphorus-containing gas is deposited on the growth substrate and epitaxially grows under the induction of the induction nucleating point or the induction nucleating layer to form the black phosphorus film. The black phosphorus film has high quality, high crystallinity and strong repeatability, is suitable for large-area and batch production of the black phosphorus film, and meets the industrial requirements in practical application.

The invention discloses an organic / perovskite bulk heterojunction nanowire photodetector, which comprises three parts, namely a substrate, a perovskite / 2,7-dioctyl[1] benzothieno[3,2-b] benzothiophenebulk heterojunction nanowire light absorption layer and an electrode. A preparation method comprises the following steps of preparing the substrate, and cleaning and processing the substrate; preparing a perovskite material solution; preparing perovskite / 2,7-dioctyl[1] benzothieno[3,2-b] benzothiophene mixed material precursor solution; preparing a perovskite / 2,7-dioctyl[1] benzothieno[3,2-b] benzothiophene bulk heterojunction nanowire by using spin-coating, blade-coating and printing methods to obtain a high-quality light absorption layer; and preparing an electrode by adopting an evaporation or printing method. The product disclosed by the invention has the advantages of being short in response time, high in photoresponsivity and stable in air, and has an important application prospect.

The invention discloses a MoS2 phototransistor capable of improving photoelectric detection performance and a manufacturing method thereof, and relates to the technical field of photoelectric detection. Based on a novel 2D / 0D hybrid interdigital phototransistor, high responsivity, a ultrafast response speed and self-powered photoelectric detection performance are realized. The phototransistor comprises a Si / SiO2 substrate, double-layer MoS2 thin films, a Pt electrode, InP@ZnS quantum dots and a silver film, and the plurality of double-layer MoS2 thin films are arranged on an upper surface of the Si / SiO2 substrate; a Pt electrode is manufactured on the upper surfaces of the double-layer MoS2 thin films and the Si / SiO2 substrate to serve as a drain-source electrode; the Pt electrode is an interdigital electrode, a thickness of the Pt electrode is 50nm, a width of the Pt electrode is 2 microns, a finger length of the Pt electrode is 300 microns, and a width distance between the two electrodes is 5 microns; the InP@ZnS quantum dots are manufactured on the surfaces of the Si / SiO2 substrate, the double-layer MoS2 thin films and the Pt electrode; and the silver film is manufactured on a back surface of the Si / SiO2 substrate to serve as a back gate electrode. Due to a design of a 2-micron interdigital Pt electrode, a plasma resonance effect can be achieved, and photoresponsivity is improved; and introduction of an asymmetric Pt / MoS2 Schottky barrier can effectively balance a dilemma of the photoresponsivity and a photoresponse speed.

The invention provides an ultraviolet light detecting transistor based on a graphene / C60 composite absorbing layer. The transistor comprises a gate metal layer, a highly doped silicon gate, a gate dielectric layer, and a graphene / C60 composite absorbing layer, wherein the gate metal layer, the highly doped silicon gate, the gate dielectric layer, the graphene / C60 composite absorbing layer are successively arranged from bottom to top. The highly doped silicon gate and the gate dielectric layer simultaneously support the graphene / C60 composite absorbing layer film as the substrate of the whole transistor device. The graphene / C60 composite absorbing layer is composed of a single layer or multiple layers of graphene and the C60 with a certain thickness. The graphene is arranged at the lower end of C60 and is furthermore used as a C60 growth template, wherein the graphene contacts with the gate dielectric layer. Two ends of the graphene layer are respectively provided with a source electrode and a drain electrode. The graphene interacts with the C60 through a Van der Waals force, thereby forming a hetero junction transistor with an ultraviolet absorbing characteristic. Array integrationcan be performed on a plurality of ultraviolet light detecting transistors. The invention provides a specific plan of the array system for spectrum detection analysis and image identification.

The invention provides a double perovskite single crystal, a preparation method and application thereof, and a double perovskite single crystal photoelectric detector, and relates to the technical field of single crystal materials. The particle size of the Cs2AgErxBi(1-x)Cl6 (x is 0-0.9) double perovskite single crystal provided by the invention is greater than or equal to 1mm. Compared with a nano-scale single crystal, the double-perovskite single crystal provided by the invention has lower defects, higher carrier lifetime and mobility, excellent photoluminescence performance and environmental stability, and can improve the overall performance of a photoelectric device when being applied to the photoelectric device; and the photoelectric characteristics of the material can be explored. Furthermore, the erbium-doped double perovskite single crystal obviously improves the light response rate and the detection rate of photoelectric detection. Moreover, the traditional double-perovskite nano single crystal needs to be prepared into a thin film and then applied to a photoelectric device, while the double-perovskite single crystal provided by the invention can be directly applied to the photoelectric device, the film does not need to be prepared firstly, the application is simple, and the cost is low.

The invention belongs to the technical field of light detectors, and particularly relates to a graphene-quantum dot two-color light detector based on a composite structure, and a preparation method ofthe graphene-quantum dot two-color light detector. Aiming at the defect that one existing graphene-quantum dot hybrid light detector can only detect light with wavelength in a narrow range due to therestriction of quantum dots on light absorption bands, the graphene-quantum dot two-color light detector is characterized by comprising eight layers of lamellar structures including a metal substrate, an insulating layer I, graphene I, quantum dots I, a dielectric layer, graphene II, quantum dots II and an insulating layer II from bottom to top, wherein two electrodes I are arranged on two sidesof the quantum dots I, the two electrodes I serve as a source electrode and a drain electrode respectively; two electrodes II are arranged on two sides of the quantum dots II, the two electrodes II serve as a source electrode and a drain electrode respectively; and the quantum dots I and the quantum dots II are manufactured by using two quantum dot materials respectively. The graphene-quantum dottwo-color light detector is suitable for polychromatic light detection.

The invention provides a solar blind photodetector and a preparation method thereof. The solar blind photodetector comprises a gallium oxide substrate containing a gallium oxide epitaxial layer, a source and a drain, a silicon oxide passivation layer, an alumina layer and a gate, wherein the source and the drain form Schottky contact with the gallium oxide substrate respectively; the silicon oxidepassivation layer is formed on the gallium oxide substrate, the source and the drain; a trench in the gallium oxide substrate is opened from the silicon oxide passivation layer; the alumina layer isformed on the bottom of the trench and the side wall of the trench; and the gate is arranged on the alumina layer of the trench and the silicon oxide passivation layer. A specific three-terminal structure is adopted, the carrier concentration of the trench can be adjusted through the gate, so that the dark current of the device can be conveniently adjusted.

A growing and preparing method of a cubic phase oxygen zinc magnesium single crystal film belongs to the technical field of semiconductor photoelectric material preparation. In the method, an LP-MOCVD method is utilized to grow a cubic phase MgZnO film at low-temperature and oxygen-enrichment conditions; the growing conditions are as follows: sapphire and magnesium oxide are selected as substrates; the pressure of a growth chamber is 2*104Pa; the growth temperature is 280-450 DEG C; the carrier gas is 99.999% nitrogen; MCp2Mg is used as a magnesium source, the temperature of the magnesium source is controlled at 40-50 DEG C, and the molar flow is 18-40 mu mol / min; DEZn is used as a zinc source, the temperature thereof is controlled at -5 DEG C, and the molar flow is 0.45-3 mu mol / min; and the high-purity oxygen is used as an oxygen source, and the molar flow thereof is 0.07 mol / min, thus the proportion of the II-VI groups is far less than 1. The cubic phase oxygen zinc magnesium single crystal film prepared by the invention has high crystallization quality and good repeatability; and the coverage area of absorption edges of the film is 200-280nm.