48 results about "Indium doping" patented technology

The invention discloses a method of increasing the properties of the gallium nitride-based transistor material and device with indium doping and applies in the field of making gallium nitride-based HEMT or HFET materials and devices. The method and process is to form the gallium nitride-based high electron mobility transistor or heterostructure field effect transistor materials on SiC or Si single crystal substrate grown by metal-organic chemical vapor deposition epitaxial growth system. After the AlN or AlGaN nucleating layer and the GaN buffer layer are grown on the SiC or Si single crystal substrate, a GaN channel layer, an AlN insert layer, an AlGaN barrier layer and a GaN capped layer are grown, and trimethyl indium is added in the growth atmosphere to do epitaxial growth with indium doping. The dislocation of the material or device made by the method of the invention is reduced greatly. The invention improves the interfacial smoothness, increases the electron mobility of the material, increases the growth window, ensures the material grow easier, improves the current collapse of the device, reduces the leakage current and increases transconductance and gain and increases the output power of microwave power devices.

The invention relates to an indium-doped zinc oxide target material and a preparation method of a transparent conducting film. Indium-doped zinc oxide powder is prepared by the liquid phase method or the solid phase method; the high-purity indium-doped zinc oxide ceramic target material is obtained by performing isostatic pressing, vacuum sintering and atmosphere annealing on the indium-doped zinc oxide powder; and the transparent conducting film is prepared from the target material through the sputtering method. The mass content of indium oxide is 0.5 to 10 percent; the purity of the target material is not less than 99.9 percent; and the relative density of the target material is not less than 95 percent and can be up to 99.5 percent. The transparent conducting film prepared from the target material through the sputtering method has high photoelectric property; the resistivity can be 7*10<-4> Omega cm at most; and in a visible light range (400 to 800nm), the highest transmissivity can be up to 92 percent and the average transmissivity is not less than 84 percent. Therefore, the transparent conducting film can be applied to fields of solar cells, light-emitting diodes, panels, liquid crystal displays and the like.

A sensor for selectively determining the presence and measuring the amount of hydrogen in the vicinity of the sensor. The sensor comprises a MEMS device coated with a nanostructured thin film of indium oxide doped tin oxide with an over layer of nanostructured barium cerate with platinum catalyst nanoparticles. Initial exposure to a UV light source, at room temperature, causes burning of organic residues present on the sensor surface and provides a clean surface for sensing hydrogen at room temperature. A giant room temperature hydrogen sensitivity is observed after making the UV source off. The hydrogen sensor of the invention can be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently used at room temperature.

The invention provides a method for manufacturing a quantum-dot light-emitting device. The method comprises: a substrate is provided and an anode is manufactured on the substrate by sputtering deposition; a hole injection layer is manufactured on the anode by using a suspended coating, atomization or ink-jet printing process; the hole injection layer is coated with a hole transport layer by using a suspended coating, atomization or ink-jet printing process; the hole transport layer is coated with a quantum-dot light-emitting layer by using a suspended coating, atomization or ink-jet printing process; an IZO electron transport layer is deposited on the quantum-dot light-emitting layer based on sputtering deposition or a solution method; and a cathode is manufactured on the IZO electron transport layer by using a thermal evaporation process, thereby obtaining a corresponding quantum-dot light-emitting device. In addition, the invention also provides a quantum-dot light-emitting device. According to the invention, the IZO material with the indium doping proportion of 0.01% to 20% is used for manufacturing the electron transport layer, so that the light-emitting efficiency of the quantum-dot light-emitting device is improved.

The invention relates to an indium doped zinc oxide transparent conducting film and a preparation method thereof. In the method, a ZnO:In transparent conducting film with a polycrystal structure is prepared on a common alkali glass and quartz glass substrate by adopting a multitarget co-sputtering magnetron sputtering technology and adopting a zinc oxide ceramic target and indium metal target co-sputtering method. In the process condition, the pressure of the argon and oxygen mixed working gas is 0.2-2.0Pa; the volume ratio of the oxygen to the argon is 0-0.2; the sputtering power of a zinc oxide target and an indium target are respectively 50-200W and 5-40W; the substrate temperature is room temperature-500 DEG C; and the bias voltage is 0-negative 200V. The prepared transparent conducting film reduces indium atomic number content to 2 percent, has favorable conducting performance, transmissivity larger than 90 percent at 400-1,100nm and can be widely applied to the fields of solar batteries, panel display, and the like instead of ITO (Indium Tin Oxide).

The invention provides a preparation method of crystalline silicon. The preparation method comprises the following steps: charging a silicon material into a crucible for growing crystalline silicon, at the same time putting doping agents into the crucible, putting the crucible into a furnace for growing the crystalline silicon, wherein the doping agents comprise a boron doping agent and an indium doping agent; the boron doping agent is one or more of a single substance, an alloy and nitride containing the boron element; the indium doping agent is one or more of a single substance, an alloy and nitride containing the indium element; the atomic volume concentration of the boron element and the indium element in a silicon material are respectively 10<14>-10<17>atmos / cm<3> and 10<14>-10<18>atmos / cm<3>; in the presence of a protecting atmosphere, heating to completely melt the silicon material and the doping agents in the crucible so as to obtain silicon melt, adjusting the crystalline silicon growth parameters, and enabling the silicon melt to grow crystal, thereby obtaining the crystalline silicon. By adopting the preparation method, the problems that in the prior art molecules of crystalline silicon prepared through boron-gallium codoping are short in service life and the crystalline silicon yield is relatively low are solved. The invention further provides the crystalline silicon.

The invention provides a fabrication process of a high-brightness LED. The fabrication process comprises the step of sequentially depositing a buffer layer, an N-type GaN layer, a light-emitting layerand a P-type GaN layer on a substrate by a metal organic chemical vapor deposition process, wherein the substrate is placed on a rotating slide disc, the light-emitting layer comprises a quantum welllayer and a quantum barrier layer which are periodically laminated, at least one of the quantum well layer and the quantum barrier layer which are periodically laminated is a high-speed quantum welllayer and a low-speed quantum well layer, and the rotational speed of the slide disc during forming the high-speed quantum well layer is larger than the rotational speed of the slide disc during forming the low-speed quantum well layer. Indium is doped into gallium nitride by increasing the rotational speed, the indium doping quantity is prevented from being increased by reducing a growth temperature, the quantum well layer is deposited under a higher temperature, and the obtained quantum well layer is better in crystal quality; and meanwhile, the fabrication process is low in cost and is easyto implement.

The invention discloses an indium oxide doped cadmium oxide target material as well as a preparation method and application thereof. The preparation method of the doped cadmium oxide target material comprises the following steps: (1) carrying out ball milling on cadmium oxide powder and indium oxide powder according to the mass ratio of CdO to In2O3 being (95-99.5):(0.5-5) for uniform mixing; (2) putting the mixture obtained in the step (1) into a mold, and then putting the mold into a vacuum hot pressing furnace; (3) vacuumizing the vacuum hot pressing furnace, when the vacuum degree is smaller than or equal to 10 Pa, starting heating, conducting heat preservation for 1-3 h at the temperature of 700-800 DEG C, starting pressurization after heat preservation is conducted for 10-50 min through pressurization pressure of 10-40 MPa, keeping the pressure maintaining time for 20-40 min, and when the temperature is reduced to 400-600 DEG C, reducing the pressure to 3-15 MPa; and (4) when the temperature is reduced to room temperature, opening a furnace door, and conducting demolding to obtain the doped cadmium oxide target material. The grain size of the target material is smaller than 10 micrometers, the bending strength is larger than 80 MPa, the sputtering effect is good, when the target material is used for preparing the CdO-based conductive film through sputtering, the film can contain In, the light-transmitting wave band of the film is widened, other impurities cannot be introduced, and the requirement for the sputtering condition is low.

The invention relates to a lithium ion battery positive electrode material. The preparation method comprises: preparing a nickel lithium manganese positive electrode material precursor by using a sol-gel liquid-phase synthesis method, then preparing an indium compound product through a liquid-phase synthesis method, mixing the nickel lithium manganese positive electrode material precursor and theindium compound product, and carrying out self-propagating combustion solid-phase synthesis to obtain a final product indium-doped nickel lithium manganese positive electrode material. According to the invention, an indium-doped nickel lithium manganese positive electrode material precursor is prepared by adopting a sol-gel method to achieve atomic-scale uniform mixing of reactants and low synthesis temperature, so that the particle size of the prepared product is as small as nanoscale, the uniformity is good, the specific surface area is large, and the form and composition are easy to control; a self-propagating combustion method is adopted, and a target product indium-doped nickel lithium manganese positive electrode material is generated through rapid sintering; and from the perspectiveof the whole process, the method is simple, easy to operate, low in energy consumption, low in cost, easy to realize industrial production, high in production efficiency, high in product specific capacity and long in cycle life.

A photovoltaic device includes a first contact layer formed on a substrate. An absorber layer includes Cu—Zn—Sn—S(Se) (CZTSSe) on the first contact layer. A buffer layer is formed in contact with the absorber layer. Metal dopants are dispersed in a junction region between the absorber layer and the buffer layer. The metal dopants have a valence between the absorber layer and the buffer layer to increase junction potential. A transparent conductive contact layer is formed over the buffer layer.

The invention relates to an indium doped zinc oxide transparent conducting film and a preparation method thereof. In the method, a ZnO:In transparent conducting film with a polycrystal structure is prepared on a common alkali glass and quartz glass substrate by adopting a multitarget co-sputtering magnetron sputtering technology and adopting a zinc oxide ceramic target and indium metal target co-sputtering method. In the process condition, the pressure of the argon and oxygen mixed working gas is 0.2-2.0Pa; the volume ratio of the oxygen to the argon is 0-0.2; the sputtering power of a zinc oxide target and an indium target are respectively 50-200W and 5-40W; the substrate temperature is room temperature-500 DEG C; and the bias voltage is 0-negative 200V. The prepared transparent conducting film reduces indium atomic number content to 2 percent, has favorable conducting performance, transmissivity larger than 90 percent at 400-1,100nm and can be widely applied to the fields of solar batteries, panel display, and the like instead of ITO (Indium Tin Oxide).

The invention belongs to the related fields of inorganic chemical nano materials and electrochemical technologies, and relates to preparation of a bismuth trioxide modified indium-doped zinc oxide material and a general method for applying the bismuth trioxide modified indium-doped zinc oxide material to a negative electrode of a zinc-nickel secondary battery. An indium element is doped into a position where a zinc oxide lattice replaces a part of zinc element by using a hydrothermal synthesis method; and then modifying bismuth trioxide on the surfaces of the indium-doped zinc oxide microspheres. The quantity of free electrons in zinc oxide can be increased by doping the indium element, so that the carrier concentration can be increased, and the conductivity of the material can be enhanced; the hydrogen evolution reaction of the material is reduced through bismuth trioxide surface modification, and finally the zinc-nickel secondary battery negative electrode material with high specific capacity and long cycle life is obtained. The generated composite material has a core-shell structure, and shows very excellent electrochemical performance at the same time. When the material is used as a negative electrode material of a zinc-nickel secondary battery, the specific discharge capacity of the material can still reach 559.3 mAh g <-1 > after 100 times of charge and discharge cycles under the current density of 0.5 C.

A Complementary Metal-Oxide-Semiconductor Transistor (CMOS) image sensor comprises a photodiode, a shifting transistor, a reset transistor, a first floating node and a second floating node which are arranged in a semiconductor substrate and an isolation structure used for device electric isolation. The photodiode is provided with at least two zones, namely a first zone and a second zone, having different indium doping concentrations, and the indium doping concentration of the first zone located at the far end of the shifting transistor is smaller than that of the second zone located at the near end of the shifting transistor. At least two-time ion injection at different angles is adopted, and an internal electric field E pointing from the second zone to the first zone is formed in the photodiode through the shielding effect of ion injection, so that photoelectron transmission speed is improved, the number of photoelectrons detained in the photodiode is reduced, photoelectron collection efficiency of the photodiode is improved, and image delay or information losing is reduced.

A photovoltaic device includes a first contact layer formed on a substrate. An absorber layer includes Cu—Zn—Sn—S(Se) (CZTSSe) on the first contact layer. A buffer layer is formed in contact with the absorber layer. Metal dopants are dispersed in a junction region between the absorber layer and the buffer layer. The metal dopants have a valence between the absorber layer and the buffer layer to increase junction potential. A transparent conductive contact layer is formed over the buffer layer.

The invention relates to the field of seed storage and packaging, and provides a manufacturing method of an antibacterial packaging material for seed storage, and the antibacterial packaging material comprises an antimony-doped tin oxide nanoparticle material and an indium-doped tin oxide nanoparticle material; the manufacturing method of the antibacterial packaging material comprises the following manufacturing steps: S1, preparing an antimony-doped tin oxide nanoparticle material; s2, preparing an indium-doped tin oxide nano particle material; s3, film blowing: three-layer co-extrusion is adopted, a film body is made of a PE material, and antimony-doped tin oxide and indium-doped tin oxide nanoparticles are added into the plastic film body; growth of mould around seeds can be remarkably inhibited, and the antibacterial time is long. Meanwhile, the used materials are low in raw material cost, simple in process, easy to put into industrial production and non-toxic, and use of nano-silver antibacterial materials with potential safety risks and very high cost is avoided.

The invention belongs to the technical field of semiconductor materials, and particularly relates to a high-quality semi-polar two-dimensional ultra-thin indium nitrogen / gallium nitride laminated structure and a preparation method thereof. The preparation method includes the following steps: growing a semi-polar gallium nitride film on a substrate; and controlling the cavity environment and growing a two-dimensional ultra-thin indium nitrogen / gallium nitride laminated structure on the semi-polar gallium nitride film. The semi-polar two-dimensional ultra-thin indium nitrogen / gallium nitride laminated structure can directly avoid the influence of the miscibility gap between indium nitrogen and gallium nitride in the system of indium-gallium-nitrogen materials and the phase separation, component fluctuation and low indium doping efficiency of indium-gallium-nitrogen materials on the crystal quality and luminescent property of the materials, and improve the efficiency of light emission andlight absorption. Light emitting diodes, lasers, photoelectric detectors and solar cells with higher photoelectric conversion efficiency, higher stability, higher luminous efficiency and coverage from the ultraviolet band to the infrared band can be obtained.

The invention pertains to the field of nanotechnology. More particularly, the invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising an indium-doped ZnSe core and ZnS and / or ZnSe shell layers. The invention also relates to methods of producing such nanostructures.

The invention relates to an indium (In)-doping tellurous acid lead (PbTeO3) quantum dot sensitizer for a solar cell and a preparation method of the sensitizer. The method comprises the following step of doping In impurity atoms into PbTeO3 quantum dots to form the sensitizer to assemble the quantum dot sensitized solar cell. Transmission paths of electron holes inside the cell are optimized, so that the electron holes can be more quickly separated and can be more effectively injected into valence bands of NiO, dark current is reduced, and the short-circuit current and the photoelectric conversion efficiency of the solar cell are improved. The method is simple and easy to operate and low in cost, and can be used for large-area manufacturing.

The invention discloses a gel film coating and food hygiene packaging application, belongs to the technical field of food hygiene and safety, and solves the problems of food spoilage and hygiene safety caused by bacterial growth of existing fresh food in cold-chain transportation, underground storage chambers, refrigerators and other dark, wet and cold environments. The AZO (aluminum-doped zinc oxide), the ITO (tin-doped indium oxide), the ATO (antimony-doped tin oxide), the IZO (indium-doped zinc oxide) and the indium-doped titanium oxide are nanometer materials with near-infrared and intermediate-infrared plasmon resonance characteristics, and the novel antibacterial material is processed on the basis of the near-infrared and intermediate-infrared plasmon resonance characteristics. The method has the advantages of non-toxic and stable raw materials, high antibacterial broad-spectrum property, no light, no contact and low cost, and has strong killing power to bacteria in a dark environment.

An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant.

The invention discloses an indium-doped cobalt-MOF derivative for preparing a capacitor electrode, metal indium is doped in a cobalt-MOF derivative structure, and the molar ratio of cobalt ions to indium ions is (5-12): 1. A semiconductor heterostructure can be formed, a space charge region is formed on an adjacent interface of a heterogeneous semiconductor, a second-degree space characteristic is formed, internal resistance is reduced, so that the mobility of electrons is increased, the diffusion rate of the electrolyte is increased, specific capacity, impedance, an energy density value and the like are good, cycling stability is high, energy is provided for electrons consumed in a Faraday reaction, and the service life of the electrolyte is prolonged. The electrochemical property of the single transition metal oxide is effectively improved.

The invention discloses an active pixel. The transmission gate of the active pixel has a polysilicon gate circuit doped with indium. The active pixel of the present invention includes a photosensitive element located in the semiconductor base and an n-type floating node located in the semiconductor base. An n-channel transfer transistor with a transfer gate is formed between the photosensitive element and the floating node. The base body of the pixel according to the invention has a lateral doping gradient of indium dopant.

The invention provides a method for growing an LED epitaxial structure, comprising a step 1 of processing a sapphire substrate; a step 2 of growing low-temperature buffer layer gallium nitride and irregular islands on the substrate; a step 3 of growing a non-doped nitride gallium layer; a step 4 of growing a silicon-doped N-type gallium nitride layer; a step 5 of growing a multiple quantum well layer, including a step 5.1 of growing a silicon-doped low-temperature Inx1Ga (1-x1) N well layer, a step 5.2 of growing an indium-doped high-temperature Inx2Ga(1-x2) N well layer, a step 5.3 of growinga low-temperature gallium nitride barrier layer, and a step 5.4 of growing a high-temperature gallium nitride barrier layer; a step 6 of growing a magnesium-doped aluminum gallium nitride layer; a step 7 of growing a magnesium-doped P-type gallium nitride layer; and a step 8 of keeping the temperature at 650 680 degrees centigrade for 20 to 30 minutes, turning off a heating and gas supply system, and cooling a product with a furnace. The method can improve the light-emitting efficiency of the LED and significantly reduce the warpage of the LED epitaxial wafer.

The present invention belongs to the field of solar cell preparation, in particular to a method for improving efficiency of a flexible copper indium gallium sulfide selenide thin film solar cell. Thespecific steps are as follows: firstly, a molybdenum electrode is sputtered on a substrate; a CIGSSe precursor solution is prepared; the precursor solution is spin-coated on the substrate to prepare aCIGSSe prefabricated film, which is heated, selenized and annealed to obtain a CIGSSe film; then a cadmium sulfide film is prepared on the CIGSSe film; zinc oxide and indium doped tin oxide thin films are sputtered on the cadmium sulfide film in turn; finally silver electrode evaporation is carried out, then the flexible CIGSSe thin film solar cell is obtained. By introducing bismuth and potassium compounds into the CIGSSe precursor solution, the growth of CIGSSe crystals is promoted; grain boundary defects are passivated; and then the performance of the CIGSSe solar cell is improved. The invention is environmental, safe and low-cost, and the efficiency of the CIGSSe thin film solar cell is effectively improved.

The invention relates to the field of nano-material preparation, and aims to provide a method for preparing indium-doped Zn2SnO4 nano-wires. The method includes adding organic zinc salt into ammoniumoxalate aqueous solution and then adding indium salt into the ammonium oxalate aqueous solution; stirring the organic zinc salt and the indium salt in the ammonium oxalate aqueous solution under waterbath conditions to form uniform solution; transferring the uniform solution into reaction kettles, carrying out constant-temperature hydrothermal reaction, and then naturally cooling reaction products until the temperatures of the reaction products reach the room temperature; adding tin salt into the reaction products and regulating a pH (potential of hydrogen) value by ammonia water; placing thereaction kettles in water bath, carrying out stirring reaction, carrying out centrifugal treatment on obtained solution and carrying out cleaning by hypochlorous acid; drying solid products to obtainthe indium-doped Zn2SnO4 nano-wires. The method has the advantages that indium elements are doped, accordingly, crystal structures of zinc stannate can be improved, and the electric conductivity canbe enhanced; the bonding properties of the zinc stannate and metal silver can be improved, and accordingly the electric and mechanical properties of silver-based electrically conductive alloy materials can be improved; the indium-doped Zn2SnO4 nano-wires can be prepared by the aid of one-step hydrothermal processes and are high in purity, homogenous in size and good in dispersibility; processes for the indium-doped Zn2SnO4 nano-wires are simple, and reaction conditions are easy to control; the method is low in cost and suitable for large-scale industrial production.

The invention discloses an oxide material with plasmon resonance performance and antibacterial packaging application, belongs to the technical field of fruit and vegetable storage and packaging, solves the problems that most of existing preservatives are chemical preservatives, harm human health and cause environmental pollution, and has the technical key points that the oxide material comprises indium-doped cadmium oxide (ICO), indium-doped cadmium oxide (ICO), antimony-doped tin oxide (ATO), indium-doped tin oxide (ITO), aluminum-doped zinc oxide (AZO), indium-doped molybdenum oxide (IMO), small-particle-size magnesium oxide (MgO), zinc oxide (ZnO), tin oxide (SnO2), molybdenum oxide (MoO3) and tungsten oxide (WO3) nanoparticles are prepared into long-acting, non-toxic and reusable packaging paper or film through molecular modification or non-modification and synthesis. The material with the packaging paper or film has the advantages of antibacterial and anticorrosive functions, long acting, no toxicity and reusability.

The invention discloses lithium vanadate with an indium and cerium or indium-doped nanofiber structure as well as a preparation method and application of the lithium vanadate. A synthesis mode is simple and easy to control. Firstly, an indium and cerium or indium-doped Li3VO4 precursor is synthesized by adopting electrostatic spinning, and calcining is performed in inert gas to obtain an indium and cerium or indium-doped Li3VO4 material with a fiber structure. A unique fiber network conductive structure not only facilitates effective infiltration of an electrolyte, but also enables the electrolyte to be in full contact with an active substance, so that the electrochemical performance of the material is improved. The fiber network-shaped indium and cerium or indium-doped Li3VO4 prepared by the method has good electrochemical performance when being used as a lithium ion electrode material, the process is simple, and the condition is mild.

The invention belongs to the field of solar cell preparation, and in particular relates to a method for improving the efficiency of a flexible copper indium gallium selenium thin film solar cell. The specific steps are as follows: first sputter the molybdenum electrode on the substrate, then prepare the CIGSe precursor solution, spin-coat the precursor solution on the substrate to prepare the CIGSe prefabricated film, heat and selenize annealing to obtain the CIGSe film; then prepare the CIGSe film on the CIGSe film cadmium sulfide thin film, then sequentially sputtering zinc oxide and indium-doped tin oxide thin films on the cadmium sulfide thin film, and finally performing silver electrode evaporation to obtain a flexible CIGSe thin film solar cell. By introducing bismuth and potassium compounds into the CIGSe precursor solution, the growth of CIGSe crystals is promoted, grain boundary defects are passivated, and the performance of CIGSe solar cells is improved. The invention is environmentally friendly, safe and low in cost, and effectively improves the efficiency of the CIGSe thin film solar cell.

The invention provides a preparation method of crystalline silicon. The preparation method comprises the following steps: charging a silicon material into a crucible for growing crystalline silicon, at the same time putting doping agents into the crucible, putting the crucible into a furnace for growing the crystalline silicon, wherein the doping agents comprise a boron doping agent and an indium doping agent; the boron doping agent is one or more of a single substance, an alloy and nitride containing the boron element; the indium doping agent is one or more of a single substance, an alloy and nitride containing the indium element; the atomic volume concentration of the boron element and the indium element in a silicon material are respectively 10<14>-10<17>atmos / cm<3> and 10<14>-10<18>atmos / cm<3>; in the presence of a protecting atmosphere, heating to completely melt the silicon material and the doping agents in the crucible so as to obtain silicon melt, adjusting the crystalline silicon growth parameters, and enabling the silicon melt to grow crystal, thereby obtaining the crystalline silicon. By adopting the preparation method, the problems that in the prior art molecules of crystalline silicon prepared through boron-gallium codoping are short in service life and the crystalline silicon yield is relatively low are solved. The invention further provides the crystalline silicon.