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119 results about "Mica substrate" patented technology
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Chalcopyrite solar cell
InactiveUS7741560B2High insulation materialReadily availablePV power plantsSolid-state devicesSolar cellMaterials science
A chalcopyrite solar cell having a mica substrate or a laminated mica substrate, an intermediate layer made of a ceramic-based material formed on the mica substrate, and a binder layer formed on the intermediate layer. The intermediate layer has a thickness equal to or more than 2 μm and equal to or less than 20 μm. The binder layer has a thickness equal to or more than 3000 Å and equal to or less than 8000 Å. The intermediate layer and the binder layer are interposed between the mica substrate and a molybdenum electrode.
Owner:HONDA MOTOR CO LTD
Chalcopyrite type solar cell
ActiveUS20090065060A1Avoid formation of linear scratchIncrease flexibilityFinal product manufactureCoatingsSolar cellMica substrate
A first electrode layer 14 is formed on a mica substrate 54, and then first scribe portions 64 are disposed. Next, a light absorbing layer 16 and a buffer layer 18 are disposed on the first electrode layer 14, and through holes (second scribe portions 66) which penetrate from the upper end face of the buffer layer 18 to the lower end face of the mica substrate 54 are formed in a spot-like manner. Then, a second electrode layer 20 is disposed on the buffer layer 18. At this time, the lower end face of the second electrode layer 20 reaches the first electrode layer 14 along the inner peripheral walls of the second scribe portions 66. Furthermore, the second electrode layer 20 is scribed to dispose third scribe portions 70.
Owner:HONDA MOTOR CO LTD
High-mobility-ratio lamellar Bi2O2Se semiconductor film and preparation method thereof
ActiveCN106011783AHigh large area continuous mobilityCheap methodChemical vapor deposition coatingSemiconductor devicesChemical vapor depositionSemiconductor
The invention discloses a high-mobility-ratio lamellar Bi2O2Se semiconductor film and a preparation method thereof. The method for preparing the high-mobility-ratio lamellar Bi2O2Se semiconductor film includes the steps that Bi2O3 powder and Bi2Se3 blocks serve as raw materials; chemical vapor deposition is carried out on a mica substrate; and after chemical vapor deposition, the lamellar Bi2O2Se semiconductor film is obtained. The method is economical, simple and feasible. The obtained film is large in area, continuous and high in mobility ratio and has broad application prospects.
Owner:PEKING UNIV
Method for preparing gold pearlescent pigment with high hue and high brightness
InactiveCN102127321AHigh glossHigh hiding power performanceInorganic pigment treatmentNatural mineral layered productsHueTemperature resistance
The invention discloses a method for preparing gold pearlescent pigment with high hue and high brightness, which comprises the following processes: coating multiple layers of iron and titanium oxide thin films on a substrate which is synthetic mica with a particle size of 10 to 60 micrometers or 10 to 100 micrometers in turn by using a hydrolysis process; and calcining the mica substrate coated with the films at a set temperature to convert the crystal form of the films by dehydration, so that the predesigned film interference effect is achieved. The gold pearlescent pigment manufactured by the method has the gold like metal luster lacking in common gold pigments, the metal luster of the gold pearlescent pigment can be as high as that of metal pigments such as copper gold powder and can realize high shielding performance, and when used in coating, the gold pearlescent pigment can produce a strong gold effect. Meanwhile, the gold pearlescent pigment has high temperature resistance, high chemical stability and high weather resistance.
Owner:GUANGDONG VOLOR PEARL PIGMENT
Radiant heater
InactiveUS20080056694A1Prevent moistureFluid heatersElectric heating systemRadiant heaterPortland cement
A thick film, large area resistance heater including a substrate having an electrically non-conductive surface on which is deposited a film electrical resistor such as a thermally sprayed, photo resist etched foil or sol-gel graphite based material. A combination of an electrically conductive film coated backer board substrate composed of portland cement, sand, cellulose fibers and other selected additives. A mica substrate heater can be cemented to a cement backer board or a vinyl with adhesive backing.
Owner:COOPER RICHARD
Method for low-cost preparation of large-size monocrystal graphene
ActiveCN103194795AOptimizing Process ParametersBrand new and flat surfacePolycrystalline material growthFrom chemically reactive gasesGas phaseShielding gas
The invention discloses a method for low-cost preparation of large-size monocrystal graphene, relates to a preparation method of monocrystal graphene, and is used for solving the technical problems that in the chemical vapor deposition (CVD) method for preparing the large-size monocrystal graphene material, the common monocrystal substrate surface treatment process is complex, and the monocrystal substrate is difficult to reuse and high in cost. The method disclosed by the invention comprises the following steps of: I, evaporating a monocrystal metal thin film on a monocrystal mica substrate; II, placing the monocrystal metal thin film obtained from the step I into chemical vapor deposition equipment, vacuumizing and filling H2 and Ar, increasing temperature and implementing heat treatment; III, continuing to fill a CH4 gas, and depositing; and IV, closing a heating power supply, stopping filling the CH4 gas, rapidly cooling to room temperature by taking Ar and H2 as protective gases, and promoting uniform growth of high-quality monocrystal graphene on the surface of the monocrystal metal substrate. The monocrystal graphene prepared by the invention is large in size, high in quality and few in defect; and the method disclosed by the invention is applicable to monocrystal graphene material manufacturing field.
Owner:HARBIN INST OF TECH
Solar battery
InactiveCN101326645AAvoid breakingImprove photoelectric conversion efficiencyFinal product manufactureSolid-state devicesHigh resistanceIndium
The invention provides a flexible solar battery having a high photoelectric conversion efficiency and no aging. A cell (10) (unit cell) comprises a lower electrode layer (2) (Mo electrode layer) formed on a flexible reconstituted mica substrate (1), a light absorption layer (3) (CIGS light absorption layer) containing copper, indium, gallium, and selenium, a buffer layer thin film (4) having a high resistance and formed of, for example, InS, ZnS, or CdS on the light absorption layer (3), and an upper electrode layer (5) (TCO) formed of, for example, ZnOAl. In order to connect a plurality of the unit cells (10) in series, a contact electrode portion (6) for connecting the upper electrode layer (5) and the lower electrode layer (2) is also formed. The contact electrode portion (6) has a larger Cu / In ratio than that of the light absorption layer (3). In other words, the contact electrode portion (6) is formed with a smaller amount of In and has a p+ type or conductor property with respect to the light absorption layer (3) that is a p-type semiconductor.
Owner:HONDA MOTOR CO LTD
Chalcopyrite Solar Cell
InactiveUS20090133749A1Reduced conversion efficiencyHigh insulation materialPV power plantsSolid-state devicesSolar cellMica substrate
A chalcopyrite solar cell having a mica substrate or a laminated mica substrate, an intermediate layer made of a ceramic-based material formed on the mica substrate, and a binder layer formed on the intermediate layer. The intermediate layer has a thickness equal to or more than 2 μm and equal to or less than 20 μm. The binder layer has a thickness equal to or more than 3000 Å and equal to or less than 8000 Å. The intermediate layer and the binder layer are interposed between the mica substrate and a molybdenum electrode.
Owner:HONDA MOTOR CO LTD
Functional mica pigment processing technique
The invention discloses a functional mica pigment processing technique, which comprises the following steps: selecting sericite as raw materials, processing the mica into powder as a mica substrate, wherein the particle size of the mica powder is 90-150mu m; selecting tetravalent titanium salt as a titanium source and coating the powder mica substrate, coating TiO2 by taking sericite as a substrate, adding zinc sulfate solution into sericite slurry for coating TiO2, and mixing, and adding calcium hydroxide into a reaction product; filtering, washing, drying and calcining the TiO2-coated sericite slurry. The functional mica pigment processing technique adopts sericite as mica, the functional mica pigment is better in gloss, is heat-insulating and resists ultraviolet rays, the adhesive power and coverage degree of cosmetics can be improved, after nano titanium dioxide is coated, titanium dioxide not only can effectively absorb ultraviolet rays, but also can reflect and scatter ultraviolet rays, and the nano zinc oxide can effectively absorb ultraviolet ray waveband range which cannot be effectively absorbed and isolated by titanium dioxide.
Owner:浙江瑞成新材料股份有限公司
High temperature resistant pearlescent pigment and preparation method thereof
ActiveCN104327552AChemically activeSmall thermal expansionInorganic pigment treatmentColor ScaleHot Temperature
The invention relates to a high temperature resistant pearlescent pigment including a synthetic mica substrate, one layer or multi layers of metal oxide layer coating the synthetic mica substrate, and a zirconia high temperature resistant layer coating the metal oxide layer. The high temperature resistant pearlescent pigment using high temperature is up to 1150 DEG C, the high temperature resistant pearlescent pigment can be stably and well dispersed at high temperature, and can be widely used in underglaze color, in-glaze color, overglaze color, enamel, enamel paper transfers, architectural enamel plates, permanent color scales, high temperature resistant paints and other industries, and the usage amount is 0.5 ~ 50% of that of a glaze or a coating.
Owner:GUANGXI CHESIR PEARL MATERIAL CO LTD
Chalcopyrite Solar Cell and Manufacturing Method Thereof
InactiveUS20090205715A1Light weightIncrease flexibilityFinal product manufactureSemiconductor/solid-state device manufacturingGas phasePliability
A solar cell having high conversion efficiency and excellent flexibility is realized. A mica substrate or laminated mica substrate is used as substrate 1. The mica and laminated mica have high insulating property and heat resistance temperature, which can be selenized at an appropriate treatment temperature through vapor-phase selenization process, high conversion efficiency and excellent flexibility resultantly suitable for mass-production can be obtained. On the other hand, because the surfaces of the mica and laminated mica have large surface roughnesses, it is impossible to induce leakage to obtain high conversion efficiency in the case where a chalcopyrite based light absorbing layer 6 is simply formed. In the present invention, an intermediate layer 2 of ceramic based material and binder layer 4 are interposed between the mica substrate 1 and a molybdenum electrode 5. By providing the intermediate layer 2 and binder layer 4, surface coating property is enhanced and a solar cell having high conversion efficiency can be realized.
Owner:HONDA MOTOR CO LTD
Preparation method of bismuth-layered compound superlattice
ActiveCN105576111AGrow fastCycle adjustableThermoelectric device manufacture/treatmentThermoelectric device junction materialsLattice mismatchBismuth compound
The invention relates to a preparation method of a bismuth-layered compound superlattice. According to the method, normal chemical cleaning is carried out on a mica substrate; the mica substrate is introduced into a vacuum system for heating and degassing after being split in atmosphere; and a superlattice film comprising a bismuth compound thin layer and a barrier material sequentially grows on the clean mica substrate. A bismuth compound layer is slowly deposited on the mica surface as a lattice mismatching buffer layer; a barrier material layer grows at the same temperature and speed to further improve the surface quality; and the bismuth compound layer and a barrier alternately grow under the conditions of keeping the growth temperature unchanged and improving the growth speed until growth within set superlattice periods is ended. The preparation method ensures that each material layer in the product superlattice grows in an ideal two-dimensional layered mode; and the technical effects that bismuth-layered compound superlattice quickly grows on the mica substrate, the superlattice interface is kept flat and the superlattice film with an adjustable period is obtained are achieved.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
High-saturation iron-series pigment and production method thereof
ActiveCN102492312AEasy to get materialsLess materialInorganic pigment treatmentTin dioxideRefractive index
Owner:河北欧克新型材料股份有限公司
Method for acquiring large-area high-quality flexible self-supporting single crystalline oxide film based on Van der Waals epitaxy
ActiveCN108517555ASimple manufacturing techniqueImprove production efficiencyPolycrystalline material growthFrom condensed vaporsCrystalline oxideVan der waals epitaxy
The invention discloses a method for acquiring a large-area high-quality flexible self-supporting single crystalline oxide film based on Van der Waals epitaxy, and mainly solves a problem in the priorart that a process for preparing the oxide film is complicated. The method comprises the following steps: 1, growing the oxide film on a mica substrate through a pulsed laser deposition technology; 2, spin-coating the surface of the oxide film by polymethyl methacrylate, and soaking in weakly acidic solution, while corners of the film are upwarping, taking out the film and placing in clear water,enabling the film to break away from the mica substrate by using a tension force of the water, and transferring to a follow-up needed substrate, to obtain the large-area high-quality flexible self-supporting single crystalline oxide film. The method is capable of, through using the mica substrate and the weakly acidic solution, acquiring the large-area high-quality flexible self-supporting singlecrystalline oxide film based on the Van der Waals epitaxy, greatly shortening the film preparation time, and preparing the multi-functional oxide film for a flexible electronic device.
Owner:XIDIAN UNIV
Chalcopyrite solar cell and manufacturing method thereof
InactiveCN101151737AImprove adhesionFinal product manufacturePhotovoltaic energy generationChalcopyriteGas phase
To realize a solar cell having a high conversion efficiency and an excellent flexibility. [MEANS FOR SOLVING PROBLEMS] A substrate (1) may be a mica substrate or a laminated mica substrate. Since the mica or the laminated mica has a high insulation ability and heat resistant temperature, it can be selenized at an appropriate processing temperature in a gas phase selenization and it is possible to obtain a high conversion efficiency. Moreover, since the mica or the laminated mica has an excellent flexibility, the substrate may be produced in a mass production. On the other hand, the mica or the laminated mica has a surface having a large surface roughness. If a chalcopyrite-based light absorption layer (6) is formed as it is, leak is caused and it is impossible to obtain a high convergence efficiency. To cope with this, an intermediate layer (2) formed by a ceramic-based material and a binder layer (4) are arranged between the mica substrate (1) and a molybdenum electrode (5). By providing the intermediate layer (2) and the binder layer (4), it is possible to increase the surface coating performance and realize a solar cell having a high conversion efficiency.
Owner:HONDA MOTOR CO LTD
Mica electro-thermal film
InactiveCN103002608AHigh temperature resistanceGood electrical performanceHeating element materialsAdhesiveAlloy
The invention relates to the field of mica material processing, in particular to mica electro-thermal film. The mica electro-thermal film is in a composite multilayer structure, the middle layer is a heating element, and two sides attached to the heating element are mica substrates. The heating element is an alloy foil sheet with a heating circuit etched, the mica substrates are mica laminated paper, and the electro-thermal film is formed by pressing the alloy foil sheet and the mica substrates through high-temperature adhesives and a high temperature pressing process. The mica electro-thermal film is simple in structure and high in thermal conversion efficiency; and heating equipment produced through the mica electro-thermal film meets utilization requirements of being safe and comfortable and environment friendly and energy saving.
Owner:湖北平安电工材料有限公司
Method for preparing uniform monolayer molybdenum sulfide at centimeter scale
InactiveCN106159000AControl growth rateLayer thickness uniformity guaranteeSemiconductor devicesGas phaseVan der waals epitaxy
The invention discloses a method for preparing uniform monolayer molybdenum sulfide at centimeter scale. The method comprises the steps of sequentially placing sulfur powder, molybdenum oxide and a mica substrate in an inert atmosphere according to the sequence from upstream and downstream of a gas circuit, carrying out chemical vapor deposition after raising temperature from the room temperature, and cooling down after the deposition is completed, thereby the molybdenum sulfide is obtained on the mica substrate. The method combines the advantages of large-scale preparation of chemical vapor deposition and accurate control of van der Waals epitaxy on layer thickness, the area of the prepared monolayer molybdenum is only limited by the volume of a cavity body of a tube furnace, and the uniformity of layer thickness can be effectively guaranteed. In addition, the growth rate of the molybdenum sulfide under low pressure condition can be effectively controlled, so that the obtained monolayer molybdenum sulfide material shows crystal quality comparable to that of a mechanical exfoliation sample.
Owner:PEKING UNIV
DNA liquid state test method based on atomic force microscope
InactiveCN101614647AGood imaging reproducibilityImprove stabilityPreparing sample for investigationSurface/boundary effectMagnetic force microscopeLiquid state
A DNA liquid state test method based on an atomic force microscope in the field of measurement for biotechnique comprises the following steps: configurating a buffer solution, then diluting a DNA sample solution to be observed to prepare the DNA sample solution; dripping the DNA sample solution on a mica substrate, washing the mica substrate with ultrapure water after adsorbing, finally setting an imaging test pool directly on the mica substrate; adding an imaging buffer solution into the imaging test pool followed by directly using the atomic force microscope to carry out scanning imaging process in the imaging test pool. The invention can realize AFM imaging of DNA molecules in the buffer solution in the absence of bivalent ions, thus being capable of avoiding the observation of the biological reaction process related to the DNA needing avoiding the participation of bivalent ions in some buffer solutions and providing an effective means for testing the conformation of the DNA molecules in life process.
Owner:SHANGHAI NAT ENG RES CENT FORNANOTECH
Ultra-smooth metal film surface preparation method
The invention discloses an ultra-smooth metal film surface preparation method. The method comprises the steps that firstly, a soft mica substrate is prepared; secondly, a layer of metal film is formed on the surface of the soft mica substrate in a vacuum evaporation mode; thirdly, the metal film is made to be evenly attached to the substrate through initial adhesion between adhesives and the metal film, and a sandwiched structure of the soft mica substrate, the metal film layer and the substrate is formed after solidification; and fourthly, the sandwiched structure obtained in the third step is soaked in a solvent, the substrate is clamped through tweezers and slightly rocked in the solvent or the soft mica substrate is dragged gently, the soft mica substrate on the outermost layer is removed through surface tension of the solvent, and an ultra-smooth metal film surface is obtained. By means of the method, a large-area flexible metal film can be acquired, the stripping process of the soft mica substrate is optimized through attachment of the adhesives, ultra-smooth metal films can be prepared on various kinds of substrates, the roughness of the ultra-smooth metal film surface can reach the atomic level, and the method is applicable to the surface treatment process during mass production.
Owner:山东韩师傅新材料有限公司
Method for preparing bismuth selenide nanosheet on mica substrate by controlling gas flow
InactiveCN108423643AEasy to operateIncrease deposition rateMaterial nanotechnologyMetal selenides/telluridesGas solidExperimental methods
The invention discloses a method for preparing a bismuth selenide nanosheet on a mica substrate by controlling the gas flow. A catalyst assistance-free chemical vapor deposition method is adopted, anda tubular furnace with a one-port quartz tube is used as growth equipment; the flow of high-purity argon is 70 sccm, and the growth time is 30 min; the Bi2Se3 nanosheet grows on the mica substrate according to a gas-solid growth mechanism; the experimental method is simple and feasible, and has a wide application prospect.
Owner:FUZHOU UNIV
Method for preparing two-dimensional indium trisulfide mono-crystals on mica substrate
InactiveCN108531981APromote crystallizationHigh purityPolycrystalline material growthFrom condensed vaporsIndiumInlet valve
The invention discloses a method for preparing two-dimensional indium trisulfide mono-crystals on a mica substrate. The method comprises the following steps: S1; washing a mica sheet; S2: preparing materials: weighing 10 to 15mg of indium trisulfide powder; putting indium trisulfide powder on a clean quartz boat; flatly placing the washed mica sheet on the quartz boat; then putting the quartz boatin a tubular furnace; S3: controlling gas flow: completely switching on a gas inlet valve and a gas outlet valve of the tubular furnace; opening an argon gas bottle and adjusting the gas flow mount of a gas flow meter to 500 to 600sccm; introducing argon gas into a quartz pipe of the tubular furnace for 10 to 30min to discharge all air impurities; S4: heating and growing: opening the tubular furnace and raising the temperature to 980 DEG C within 20min; after keeping heat at 980 DEG C for 5 to 10min, naturally cooling to obtain the two-dimensional indium trisulfide mono-crystals. The method disclosed by the invention has the advantages of simple needed equipment and preparation technology, short growth time, capability of directly obtaining two-dimensional indium trisulfide with good crystallization degree relatively high purity and relatively large size and the like.
Owner:GUANGDONG UNIV OF TECH
High-temperature-resistant flexible sensor and preparation method thereof
InactiveCN110455317AResponsiveFill in the application gapVacuum evaporation coatingSputtering coatingMetallic electrodeEtching
The invention relates to a high-temperature-resistant flexible sensor and a preparation method thereof. The high-temperature-resistant flexible sensor comprises a mica substrate, a conductive layer covering the surface of the mica substrate, and a metal electrode formed on the conductive layer. According to the invention, since the conductive layer grows on the mica, the prepared flexible sensor has advantages of good high-temperature resistance performance, simple structure, and light weight; and the manufacturing process using pulsed laser deposition is simple and is compatible with the traditional coating process and the semiconductor process, so that the photolithography and ion etching are performed and thus the industrial production of flexible sensors is realized simply and efficiently.
Owner:SOUTH CHINA NORMAL UNIVERSITY
Preparation method, product and application of flexible vanadium dioxide film
ActiveCN105887016ALow priceSimple processVacuum evaporation coatingSputtering coatingVanadium dioxidePliability
The invention provides a preparation method for directly depositing a crystalline vanadium dioxide film on a flexible mica substrate and a product and application of the flexible vanadium dioxide film. According to the method, the vanadium dioxide film with adjustable thickness, flexibility and light transmission performance is grown on the mica sheet substrate, and the flexibility of the product is adjusted in a peeling mode. The product has the advantages of being high in transparency, flexibility and transferability and excellent in infrared regulation performance and can be applied to the fields of flexible smart windows, infrared laser protection, energy-saving coatings and optical switches.
Owner:UNIV OF SCI & TECH OF CHINA
Sandwich-structure thin film, preparation method and application thereof
ActiveCN108456850AReduce surface roughnessImprove photoelectric performanceVacuum evaporation coatingSputtering coatingSurface roughnessMetal thin film
The invention discloses a sandwich-structure thin film, a preparation method and application thereof, wherein the sandwich-structure thin film comprises a mica substrate, and a lower-layer oxide thinfilm, an interlayer metal thin film and an upper-layer oxide thin film which are arranged on the mica substrate. The sandwich-structure thin film disclosed by the invention is low in surface roughnessand excellent in photoelectric property, is rapid in response and high in efficiency when being used as a thin-film heater, and also can be used for electrodes of other electronic devices, so that the application prospect is wide.
Owner:SHENZHEN UNIV
Method for preparing non-layered two-dimensional nano-cadmium sulfide crystal material and product
ActiveCN108048900ARaise the energy barrier of crystal facet reactionAchieve independent controlPolycrystalline material growthNanotechnologyProduct gasOxygen
The invention belongs to the field of cadmium sulfide crystal materials, and discloses a method for preparing a non-layered two-dimensional nano-cadmium sulfide crystal material and the product. The method includes the following steps that (a) a reaction vessel is selected and divided into an upstream area, a central area and a downstream area, and a Cd source and an S source are selected and separately placed in the upstream area; (b) an In compound is selected as a surface inhibitor and placed in the central area, and mica is selected as a substrate and placed in the downstream area; (c) inert gas is introduced into the reaction vessel to isolate oxygen for a reaction, and after the reaction, the desired non-layered two-dimensional nano-cadmium sulfide crystal material is formed on the mica substrate. The invention further discloses the product prepared through the method. By means of the method, the requirement for large-batch preparation of the two-dimensional nano-CdS crystal material is met, and the product has a flat crystal surface and a uniform morphology and is uniform in element distribution; besides, rich raw materials are available, the price is low, the preparation method is simple, and large-scale production and promotion are convenient.
Owner:HUAZHONG UNIV OF SCI & TECH
Method for atom force microscope inducing single molecule DNA positoning mutation
InactiveCN1766104AGood effectEasy to operate and controlDNA preparationDNA fragmentationDna targeting
Owner:SHANGHAI JIAO TONG UNIV
High-purity ferro-titanium pearlescent pigment with bright golden yellow effect and preparation method thereof
InactiveCN107325589AIncrease reflectionHigh purityInorganic pigment treatmentMirror reflectionRefractive index
The invention discloses a high-purity ferro-titanium alloy shiny gold effect pearlescent pigment and a preparation method thereof. The first high-refractive-index oxide layer is tin oxide or zinc oxide, the second and fourth high-refractive-index oxide layers are titanium oxide, and the third and fifth high-refractive-index oxide layers are iron oxide. The product invented is to increase the interface of different substances through multi-layer composite coating of tin oxide, zinc oxide, titanium oxide, and iron oxide. Light can easily propagate along a straight line in the same medium. When encountering the interface of different substances, it will Part of the light is refracted, and the other part is reflected. The light is reflected, refracted, interfered, and superimposed multiple times through the multi-layer metal oxide layer, which enhances the mirror reflection effect of the pearlescent pigment and improves the purity and brightness of the pigment; the production process of the present invention Simple, operable, stable scale production, low cost, suitable for industrial production.
Owner:JIANGSU BEILIDE NOVEL MATERIALS
Synthetic mica based pearlescent pigments containing ferrites
ActiveUS7470318B2Improve water stabilitySynthetic resin layered productsCellulosic plastic layered productsAutomotive paintPigment
A pearlescent pigment comprises (a) synthetic mica substrate, (b) calcined ferrite coating on the substrate, and (c) an outer layer or treatment wherein said outer layer or treatment was added to the calcined ferrite coated synthetic mica in water.The pearlescent pigment may be used in exterior applications such as automotive paint systems.
Owner:SUN CHEM CORP
Synthetic mica based silver pearlescent pigment as well as preparation method and application thereof
The invention provides a synthetic mica based silver pearlescent pigment as well as preparation method and application thereof. A mica substrate is externally coated with a barium sulfate layer, a first tin oxide doped titanium dioxide layer, a titanium dioxide doped silicon dioxide layer and a second tin oxide doped titanium dioxide layer in turn. A structure of alternate coating by high- and low-refractive indexes (tin-titanium oxide / titanium-silicon oxide / tin-titanium oxide) is adopted, but the same hydrolysis conditions are adopted in the coating process of a plurality of oxide layers; thus, the technology is stabilized, and the cost is remarkably saved. By adopting titanium dioxide doped silicon dioxide on the low-refractive index layer to form a semitransparent middle interlayer, thepigment gloss is improved while the covering power is noticeably enhanced; the base material is coated by a layer of semitransparent barium sulfate, and unexpectedly, the covering power is further enhanced; therefore, the silver pearlescent pigment has the advantages of high gloss, strong covering power and the like.
Owner:FUJIAN KUNCAI MATERIAL TECH
Method for growing single crystal [gamma]-phase indium selenide film on mica substrate
ActiveCN110335809AImprove surface reactivityIncrease the proportionSemiconductor/solid-state device manufacturingIndiumSurface layer
The invention relates to a method for growing a single crystal [gamma]-phase indium selenide film on a mica substrate. The method comprises the following steps of: the step 1) chemically cleaning andmechanically cleaving a single crystal mica substrate to peel off a surface layer to obtain a flat mica substrate with a clean surface; the step 2) transferring the mica substrate prepared in the step1) into a molecular beam epitaxy vacuum system, performing heating to a temperature of 450 DEG C, and performing degassing until the vacuum degree of the system is better than 8*10 <-10> mbar; the step 3) after the mica is degassed, performing natural cooling to a growth temperature range, and simultaneously opening an In beam flow source and a Se beam flow source to start to grow an In2Se3 film;and the step 4) immediately stopping heating the substrate after the film growth is finished, and quickly cooling the substrate to a room temperature to obtain the single crystal [gamma]-phase In2Se3film. According to the method for growing the In2Se3 film, the In2Se3 film is deposited and grown on the surface of the mica substrate by utilizing a molecular beam epitaxy technology, and the high-quality single crystal [gamma]-phase In2Se3 film can be prepared at a lower growth temperature.
![Method for growing single crystal [gamma]-phase indium selenide film on mica substrate](https://images-eureka-patsnap-com.sutd.idm.oclc.org/patent_img/1d2086fd-2267-4480-8f05-0b88d8221b09/HDA0002116491680000011.png "Method for growing single crystal [gamma]-phase indium selenide film on mica substrate")
![Method for growing single crystal [gamma]-phase indium selenide film on mica substrate](https://images-eureka-patsnap-com.sutd.idm.oclc.org/patent_img/1d2086fd-2267-4480-8f05-0b88d8221b09/HDA0002116491680000012.png "Method for growing single crystal [gamma]-phase indium selenide film on mica substrate")
![Method for growing single crystal [gamma]-phase indium selenide film on mica substrate](https://images-eureka-patsnap-com.sutd.idm.oclc.org/patent_img/1d2086fd-2267-4480-8f05-0b88d8221b09/HDA0002116491680000021.png "Method for growing single crystal [gamma]-phase indium selenide film on mica substrate")
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
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