The invention discloses a shield grid groove type 
MOSFET process method, comprising: a first step, with 
silicon nitride and 
silicon oxide as a 
hard mask, 
etching a substrate to form a groove; a second step, depositing a layer of 
silicon oxide on the side wall and the bottom of the groove; a third step, filling polysilicon in the groove and 
etching back; a fourth step, 
etching back the polysilicon, and removing the 
silicon oxide on the side wall of the groove; a fifth step, depositing a layer of 
silicon nitride to cover the inner side wall of the groove and the polysilicon; a sixth step, etching the 
silicon nitride above the polysilicon to 
expose the polysilicon; a seventh step, depositing 
silicon oxide above the polysilicon; an eighth step, removing the 
silicon nitride on the entire device; a ninth step, depositing 
silicon oxide, depositing polysilicon and etching back to form a groove polysilicon grid; and a tenth step, forming a 
body region, injecting a source region, and depositing interlevel 
dielectric to form 
contact hole fabrication 
metal process. The process disclosed by the invention is used for realizing single control of 
oxide films 
and gate oxide between the polysilicon, and solving the problem of relatively 
high current leakage of the grid of the device.