112 results about "Chalcoides" patented technology

Method of producing one or more transition metal dichalcogenide (MX2) layers on a substrate, comprising the steps of: obtaining a substrate having a surface and depositing MX2 on the surface using ALD deposition, starting from a metal halide precursor and a chalcogen source (H2X), at a deposition temperature of about 300° C. Suitable metals are Mo and W, suitable chalcogenides are S, Se and Te. The substrate may be (111) oriented. Also mixtures of two or more MX2 layers of different compositions can be deposited on the substrate, by repeating at least some of the steps of the method.

Methods for depositing group 5 chalcogenides on a substrate are disclosed. The methods include cyclical deposition techniques, such as atomic layer deposition. The group 5 chalcogenides can be two-dimensional films having desirable electrical properties.

The invention discloses a two-dimensional transition metal disulfides (TMDs) monocrystalline, and a preparation method and applications thereof. According to the preparation method, in an inert atmosphere, assist control of the concentration of S or Se in a system is realized with common metal which is capable of reacting with sulfur family elementary substance (S, Se) and hydrogen so as to control sulfuration degree or selenylation degree of a transition metal layer, and controllable growth of TMDs monocrystalline is realized via chemical vapor deposition; deposition temperature is controlled to be 750 to 850 DEG C, and deposition time is controlled to be 5 to 15min so as to complete TMDs monocrystalline preparation; wherein, strict control on high-quality two-dimensional transition metal disulfides monocrystalline is realized via optimization of preparation parameters such as substrate sputtering treatment method, sulfur family elementary substance powder using amount, absorbed S / Se metal area and kinds, hydrogen concentration, growth temperature, and growth time.

The present invention provides a lowly toxic phosphor and a production process thereof, and more particularly, the synthesis of nanoparticles having a chalcopyrite structure, a phosphor by compounding with a metal chalcogenite, and a production process thereof. The phosphor is a first compound composed of elements of groups I, III and VI having a chalcopyrite structure, or composite particles or composite compound containing the first compound, and the particle diameter of the first compound, or the composite particles or composite compound, is 0.5 to 20.0 nm. The phosphor is produced by mixing a first solution (Solution A), in which one or more of copper (I), copper (II), silver (I), indium (III), gallium (III) and aluminum (III) are respectively dissolved and mixed in a solution to which has been added a complexing agent, and a second solution (Solution C), in which a chalcogenite compound has been dissolved, followed by heat-treating under pre-determined synthesis conditions.

The invention relates to a preparation method of a small-size transition metal chalcogenide two-dimensional nanosheet. The method is characterized in that the powder of a block is treated as a raw material; a polymer is used as an additive, and polymer assistant ball milling is performed to obtain transition metal chalcogenide two-dimensional nanosheets with different sizes and different components. The method comprises three steps of weighing high polymers and polymer assistant ball milling prepared blocky powder; performing ball milling, separating, water adding, uniformly mixing and movingout; performing gradient centrifugation to obtain products with different sizes; purifying to remove excessive polymers. With the adoption of the method, the problems such as low yield, non-uniform appearance and complex processes of a current preparation method of a current small-size transition metal chalcogenide two-dimensional nanosheet can be solved; the method has the advantages of being high in yield, simple in processes, high in generality, easy to control processes,and the like; the prepared small-size transition metal chalcogenide two-dimensional nanosheet can be applied to differentfields, such as the fields of catalyzing, photoelectric and biomedicines.

The invention discloses a method for preparing a hollow ball of sulfide and oxide of nickel. The method comprises the following steps: (1), adopting ultrasonic or mechanical stirring to disperse nickel nitrate, L-cysteine and urea uniformly in deionized water; (2), transferring the mixed liquid into a reaction kettle, and reacting for 8 to 48 hours at a temperature of 140 DEG C to obtain a nickel disulphide hollow ball; (3), calcinating nickel disulphide at different temperatures to obtain hollow balls of nickel monosulfide and nickel oxide respectively; and (4), under hydrothermal condition, reacting nickel disulphide with selenium source and tellurium source respectively for 4 to 48 hours at a temperature of 140 DEG C to obtain hollow balls of nickel diselenide and nickel telluride. According to the method, raw materials are cheap, easy to obtain, and convenient to compound; the required devices are simple; no pollution is caused in the production process; and the large scale production can be realized rapidly.

The present invention provides a cathode produced from a cathode slurry comprising: (a) a cathode active material based on a lithium-containing metal composite oxide or a chalcogenide compound; and (b) an ionic liquid, as well as an electrochemical device including the cathode. The inventive cathode can greatly improve the safety of batteries without causing a significant deterioration in the battery performance.

In a method of forming a chalcogenide compound target, a first powder including germanium carbide or germanium is prepared, and a second powder including antimony carbide or antimony is prepared. A third powder including tellurium carbide or tellurium is prepared. A powder mixture is formed by mixing the first to the third powders. After a shaped is formed body by molding the powder mixture. The chalcogenide compound target is obtained by sintering the powder mixture. The chalcogenide compound target may include a chalcogenide compound that contains carbon and metal, or carbon, metal and nitrogen considering contents of carbon, metal and nitrogen, so that a phase-change material layer formed using the chalcogenide compound target may stable phase transition, enhanced crystallized temperature and increased resistance. A phase-change memory device including the phase-change material layer may have reduced set resistance and driving current while improving durability and sensing margin.

The invention provides a memristor, which comprises a bottom electrode layer, an intermediate medium layer and a top electrode layer which are sequentially formed on a substrate, wherein the intermediate medium layer comprises a chalcogenide layer and an oxide layer; the chalcogenide layer is connected with the bottom electrode layer; and the oxide layer is connected with the top electrode layer. A proper top electrode is adopted to be combined with the oxide layer and the chalcogenide layer, so that the prepared memristor has ultralow operating voltage and has ultrahigh electric sensitivity. The invention further provides an application of the memristor in preparation of a neural synaptic bionic device. The memristor has good synaptic plasticity and achieves short-range plasticity and long-range plasticity under the ultralow operating voltage; and the neural synaptic bionic device with high sensitivity is successfully prepared.

The invention discloses an ultra-small metal chalcogenide compound nano crystal and a biological synthesis method and application thereof. In one embodiment, the synthesis method is as follows: a protein with the isoelectric point PI lower than 9.0 and a metal salt are mixed with water evenly to form a mixed solution, the mixed solution is adjusted to alkaline, a reducing agent and a sulfur source are added for reaction to form the ultra-small metal chalcogenide compound nano crystal with the particle size less than 10nm. The method has the characteristics of mild reaction conditions, simple operation, direct use of particles without additional surface modification in biological photothermal therapy, and the like, the prepared ultra-small metal chalcogenide compound nano crystal is uniform in size, good in dispersion and high in stability, and the prepared ultra-small metal chalcogenide compound nano crystal has very good bio-compatibility without any surface modification, also has the photothermal effect, and is a great-application-prospect nano material used for photothermal therapy and biological fluorescence imaging.

The invention belongs to the field of composite materials and in particular relates to a laminated metal chalcogenide (LMC) / carbon nanotube (CTNs) flexible compound film material of a highly ordered structure and a preparation method thereof. The composite material comprises an ultrathin self-supporting (transparent) CNTs film substrate and an LMC film which uniformly wraps the surface thereof to form the flexible composite film material which has a nanoscale porous structure and a three-dimensional network structure of a high electric channel. The preparation method comprises the following steps: providing an alloy bracket for bearing a self-supporting CNTs film and cleaning the carried CNTs film under a heating condition with plasma; and preparing the LMC / CNTs composite functional film material from the pre-treated CNTs film at an air pressure of 0.2-2Pa and at a temperature of 30-800 DEG C by virtue of a magnetron sputtered deposition technology. According to the material provided by the invention, a crispy laminated metal chalcogenide functional two-dimensional (2D) material and one-dimensional (1D) CNTs are effectively connected to form a three-dimensional (3D) network structure of structural flexibility.

The invention discloses a preparing method of a metal chalcogenide nanomesh material. A mesoporous material is adopted as a template material. The metal chalcogenide nanomesh material is prepared by steps of: preparing a metal precursor into a solution, filling a pore channel space of the mesoporous template material with the solution so as to prepare a mesoporous material loading the metal precursor; mixing the mesoporous material loading the metal precursor with a chalcogenide precursor and putting the mixture into a heating space of a heating device, or putting the mesoporous material loading the metal precursor and the chalcogenide precursor side by side into the heating space of the heating device; raising the temperature rapidly to 300-900 DEG C under the protection of carrier gas and maintaining the temperature for 15-600 min; adding a template corroding agent into the obtained solid powder so that the mesoporous material is fully dissolved in the template corroding solution; and filtering and drying the filter cake. The metal chalcogenide nanomesh material is obtained by synthesis for the first time. The preparation method is free of use of precious metals, free of vacuum conditions, simple in synthetic process, and prone to large-scale production.

The present invention discloses a nano powder body and nano particle aggregative structure material preparation method. Said method can regulate and control grain size of nano particle, can make saidmaterial possess uniform grain size, good dispersion property and high yield. Its equipment is simple, and consumption is less. Said method mainly includes the following steps: continuously feeding reactant solution into quickly-mixing reaction precipitation equipment, and continuously discharging the precipitate-contained slurry material from said equipment, then making the slurry material undergo the processes of cleaning, filtering or ageing, cleaning and filtering, drying, heat treatment, pulverizing and packaging. Said method can be used for producing various nano powder body and nano particle aggregative structure materials.

A method embodiment involves preparing single metal or mixed transition metal chalcogenide using exfoliation of two or more different bulk transition metal dichalcogenides in a manner to form an intermediate hetero-layered transition metal chalcogenide structure, which can be treated to provide a single-phase transition metal chalcogenide.

A chalcogenide compound synthesis method includes homogeneously mixing solid particles and, during the mixing, imparting kinetic energy to the particle mixture, heating the particle mixture, alloying the elements, and forming alloyed particles containing the compound. Another chalcogenide compound synthesis method includes, under an inert atmosphere, melting the particle mixture in a heating vessel, removing the melt from the heating vessel, placing the melt in a quenching vessel, and solidifying the melt. The solidified melt is reduced to alloyed particles containing the compound. An alloy casting apparatus includes an enclosure, a heating vessel, a flow controller, a collection pan and an actively cooled quench plate. The heating vessel has a bottom-pouring orifice and a pour actuator. The flow controller operates the pour actuator from outside the enclosure. The quench plate is positioned above a bottom of the collection pan and below the bottom-pouring orifice.

The invention relates to a regulation and control method based on the energy valley polarization characteristic of a two-dimensional single-layer transition metal chalcogenide. The method comprises the following steps of: (1) growing a two-dimensional single-layer transition metal chalcogenide on a substrate by adopting a chemical vapor deposition method; (2) preparing two-dimensional ferromagnetic metal by adopting a mechanical stripping method; and (3) transferring the two-dimensional ferromagnetic metal to the two-dimensional single-layer transition metal chalcogenide in an aligning mannerthrough an aligning transfer platform to form a two-dimensional single-layer transition metal chalcogenide-two-dimensional ferromagnetic metal heterostructure. The heterostructure is formed by the two-dimensional ferromagnetic metal material and the two-dimensional single-layer transition metal chalcogenide, so that the characteristics of flexibility and atomic-level thinness of the two-dimensional material can be fully exerted, the problem that the characteristics of the two-dimensional material are damaged due to the three-dimensional-two-dimensional heterostructure formed by the traditionalferromagnetic metal material and the two-dimensional material is effectively solved, and the regulation and control method based on the energy valley polarization characteristic of a two-dimensionalsingle-layer transition metal chalcogenide can be applied to development and research of ultrathin microminiaturization, flexible spintronics, energy valley electronic devices and the like.

The invention relates to a two-dimensional transition metal chalcogenide crystal, and a preparation method and application thereof. The preparation method includes the following steps: (1) sequentially putting a chalcogen source and a transition metal oxide source along an airflow direction in a heating device, wherein the transition metal oxide source is coated with a molecular sieve, and a growth substrate is put on the upper side of the transition metal oxide source; (2) injecting a protective gas into the heating device, increasing the temperature until the temperature of the transition metal oxide source reaches a chemical vapor deposition temperature and the temperature of the chalcogen source reaches an elemental volatilization temperature, and performing chemical vapor deposition to obtain the two-dimensional transition metal chalcogenide crystal. The large-area uniform monolayer or multilayer two-dimensional transition metal chalcogenide crystal can be obtained by the preparation method and can be applied to polarized photoelectric detection or topological field effect transistors.

The invention relates to a preparation method of a transition metal disulfide quantum chip. The preparation method includes: mixing transition metal disulfide raw materials, auxiliary inorganic matter and ball milling balls, performing ball milling, removing the ball milling balls and the inorganic matter, and performing ultrasonic dispersing on the product to obtain the even and stable dispersing liquid of the transition metal disulfide quantum chip. Compared with the prior art, the preparation method has the advantages that the method is rich in raw material source, efficient, environmentally friendly, simple to operate and the like, and the prepared transition metal disulfide quantum chip keeps intrinsic characteristics, extremely few in defects, extremely high in yield and suitable for being prepared in a large-scale manner.

Chalcogenide compounds, including ternary and quaternary tin and antimony chalcogenides, for use as absorbents in the remediation of hazardous materials are provided. Also provided are methods for using the chalcogenides in the remediation of ionic and elemental metals from aqueous and non-aqueous fluids.

Provided are nanoparticles passivated with a cationic metal-chalcogenide complex (MCC) and a method of preparing the same. A passivated nanoparticle includes: a core nanoparticle; and a cationic metal-chalcogenide compound (MCC) fixed on a surface of the core nanoparticle

Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8±0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.

The invention relates to an efficient and general two-dimensional nanometer sheet-zero-dimensional nanocrystalline co-assembly method. Long-chain organic ligand (such as oleic acid / oleylamine) coatednanometer particles are synthesized by a solution method; the materials are dispersed in a nonpolar solvent (such as n-hexane and toluene); then, fluoboric acid compounds (such as fluoboric acid, diazonium tetrafluoroborate and nitrosonium tetrafluoroborate) are used for exchanging the nanometer particles into polar solvents (such as N,N- dimethylformamide); at the moment, the zeta potential of the nanometer particles is positive; then, the potential of most nanometer sheets (such as oxidized graphene, transition metal disulfide compounds, layered metal oxides, C3N4, hexagonal boron nitride and transition metal carbide) is negative; through mixing, the nanometer sheets and the nanometer particles are induced to subjected to static assembly for obtaining two-dimensional-zero-dimensional nanometer crystals. The method has the advantages that the idea is novel; the application is wide; simplicity and low cost are realized; the functions and the application can be widely adjusted along with the ingredient change.

A method for fabricating a resistively switching memory cell is provided. The method includes the following steps: depositing a first electrode, applying a layer of a chalcogenide compound to the first electrode, applying a layer of silver or copper, and operating a noble gas plasma in a back-sputtering mode in order to effect silver or copper diffusion into the layer of the chalcogenide compound. Optionally, and if appropriate, further layers for the second electrode are then deposited.

A programming method for a phase-change random access memory (PRAM) may be provided. The programming method may include determining an amorphous state of a chalcogenide material using programming pulses to form programming areas having threshold voltages corresponding to logic high and logic low, and / or controlling a trailing edge of programming pulses during programming to control a quenching speed of the chalcogenide material so as to adjust a threshold voltage of the chalcogenide material. Accordingly, programming pulses corresponding to logic low or logic high may have uniform magnitudes regardless of a corresponding logic level. Accordingly, reliability of a PRAM device may be improved.

The invention discloses a cadmium-based chalcogenide nanorod, preparation, an electrocatalyst, application and an application method. The cadmium-based chalcogenide nanorod is one of a cadmium sulfoselenide alloy nanorod, a cadmium sulfide nanorod or a cadmium selenide nanorod. The cadmium-based chalcogenide nanorod has the diameter of 5-7nm and the length of 70-170nm. The preparation method of the cadmium-based chalcogenide nanorod comprises the following steps: dissolving a cadmium salt into anhydrous ethylenediamine, and uniformly stirring to obtain a mixed solution A; adding sulfur powderand / or selenium powder and hydrazine hydrate into the mixed solution A, and stirring to obtain a mixed solution B; carrying out a solvothermal reaction on the mixed solution B, and performing after-treatment. The preparation method of the cadmium-based chalcogenide nanorod disclosed by the invention is capable of easily realizing large-scale synthesis and low in cost, the obtained nanorod serves as a catalyst of a carbon dioxide electroreduction catalytic reaction, the activity and stability are high, the selectivity of the catalysate is easily regulated, high current density is maintained, and mixed gas of carbon monoxide and hydrogen with an adjustable ratio in a wide range can be obtained.

The invention provides a carbon-composited sulfur compound composite material and a preparation method and an application thereof, belonging to the technical field of secondary ion batteries. The carbon-composited sulfur compound composite material provided by the invention includes sulfur compound nanocrystals and disordered graphite carbon. The sulfur compound nanocrystals are located in the networked frame structure of the disordered graphite carbon. The sulfur compound nanocrystals are made of at least one of metal sulfur compound, silicon disulfide and silicon selenide. The carbon-composited sulfur compound composite material provided by the invention can still maintain high mass specific capacity and coulomb efficiency of above 99% after more than 100 times of cyclic charging and discharging, and has excellent cycle stability and rate performance.

The invention relates to a Na fast-ion conductor Na3PSe4 which is a conductor with a cubic phase structure and has a high ion conducting characteristic, and the preparation method of Na3PSe4 is as follows: weighing the original material, such as Na, P, and Se in a glove box, then putting to a crucible, then putting into a quartz tube to vacuum seal, fusing in a muffle furnace, at last cooling to room temperature, forming into blocks, making into powder. The preparation technology of the invention is simple, the Na ionic conductivity of the prepared Na3PSe4 solid electrolyte is more than 1ms / cm at most, and the performance of the Na3PSe4 is the highest in the sulfur compound at present.

The invention belongs to the technical field of material preparation, and particularly relates to a preparation method and manufacturing equipment for TMDCs (two-dimensional transition metal disulphide compound single crystals). The controllability and the sample quality of preparation of TMDCs samples are improved by regulating the volatilizing rate of a precursor by directly controlling the reaction temperature on the surface of a metal through current, voltage, electromagnetic waves and the like loaded on a metal foil precursor. Meanwhile, the overall gas phase deposition process is a surface chemical reaction; the consumption amount of a reaction precursor is low; the purpose of producing the TMDCs continuously for a long time can be achieved. In the process of preparing the TMDCs by adopting the equipment, metal oxide powder is not required to be taken as the precursor, so that the waste of the precursor is avoided, and the metal precursor is utilized repeatedly. The method and the equipment for preparing the TMDCs can be used for hot wall and cold wall CVD (chemical vapour deposition) systems, and has good universality.

The invention discloses a preparation method of a polydopamine modified transition metal chalcogenide nano-sheet. The method includes the steps: preparing dopamine transparency water solution and transition metal chalcogenide water solution, and enabling the molar ratio of dopamine to transition metal chalcogenides to be (3-5):1; preparing trihydroxymethyl aminomethane hydrochloride (Tris-HCL) buffer solution with the concentration of 10mM and a pH (potential of hydrogen) value of 8.5; transferring the solution prepared in the steps into a wild-mouth bottle to mix the solution, and placing thewild-mouth bottle with the solution into a water-bath ultrasonic instrument to perform water-bath ultrasonic reaction for 1h-6h under ultrasonic power of 65KHz; washing products in the steps by the aid of ultra-pure water, performing centrifugal purification, dispersing the finally-prepared products into the ultra-pure water, and storing the products in a refrigerator of 4 DEG C. The preparationmethod is simple and efficient and good in reproducibility and meets environment-friendly requirements, mass production is facilitated, and the polydopamine modified transition metal chalcogenide nano-sheet prepared by the method is low in cost, normalized in shape, uniform in size and uniform to disperse.

The invention provides a transition metal chalcogenide nanowire and a preparation method and an application thereof. The preparation method comprises that under vacuum conditions, a metal, semi-metalor semiconductor substrate is kept to be heated to 250 DEG C-350 DEG C, transition metal atoms and chalcogenide atoms are evaporated onto the substrate, a transition metal chalcogenide film is prepared, the transition metal chalcogenide film is heated and annealed, and thus the transition metal chalcogenide nanowire is prepared. The prepared nanowire has the advantages of regular shape, definite width, uniform distribution of density of states, no impurity ions, simple operation and high preparation efficiency, and can be used for studying quantum physical phenomena in one-dimensional systems,wires in nanoscale circuits, and metal-monatomic layer semiconductor contact.