56 results about "Trisilane" patented technology

A silicon nitride film is formed on a substrate in a reaction chamber by introducing trisilane and a reactive nitrogen species into the chamber in separate pulses. A carbon precursor gas is also flowed into the chamber during introduction of the trisilane and / or during introduction of the reactive nitrogen species, or in pulses separate from the trisilane and reactive nitrogen species pulses. The carbon is used as a dopant in the silicon nitride film and advantageously allows a high stress silicon nitride film to be formed.

Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer is then formed by nitriding the silicon layer. By repeating these steps, a silicon nitride layer of a desired thickness is formed.

A method for forming a strained silicon layer device with improved wafer throughput and low defect density including providing a silicon substrate; epitaxially growing a first silicon layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; epitaxially growing a step-grade SiGe buffer layer over and contacting the first silicon layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; epitaxially growing a SiGe capping layer over and contacting the step-grade SiGe buffer layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; and, epitaxially growing a second silicon layer using at least one deposition precursor selected from the group consisting of disilane and silane.

Methods are provided for producing SiGe-on-insulator structures and for forming strain-relaxed SiGe layers on silicon while minimizing defects. Amorphous SiGe layers are deposited by CVD from trisilane and GeH4. The amorphous SiGe layers are recrystallized over silicon by melt or solid phase epitaxy (SPE) processes. The melt processes preferably also cause diffusion of germanium to dilute the overall germanium content and essentially consume the silicon overlying the insulator. The SPE process can be conducted with or without diffusion of germanium into the underlying silicon, and so is applicable to SOI as well as conventional semiconductor substrates.

Sequential processes are conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures. Under reaction rate limited conditions, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. Trisilane flow is interrupted. A silicon nitride layer is then formed by nitriding the silicon layer with nitrogen radicals, such as by pulsing the plasma power (remote or in situ) on after a trisilane step. The nitrogen radical supply is stopped. Optionally non-activated ammonia is also supplied, continuously or intermittently. If desired, the process is repeated for greater thickness, purging the reactor after each trisilane and silicon compounding step to avoid gas phase reactions, with each cycle producing about 5-7 angstroms of silicon nitride.

Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.

Sequential processes are conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures. Under reaction rate limited conditions, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. Trisilane flow is interrupted. A silicon nitride layer is then formed by nitriding the silicon layer with nitrogen radicals, such as by pulsing the plasma power (remote or in situ) on after a trisilane step. The nitrogen radical supply is stopped. Optionally non-activated ammonia is also supplied, continuously or intermittently. If desired, the process is repeated for greater thickness, purging the reactor after each trisilane and silicon compounding step to avoid gas phase reactions, with each cycle producing about 5-7 angstroms of silicon nitride.

A silane-terminated polyurethane composition is the reaction product of a silane-terminated polyurethane prepolymer component, a silane-terminated monomeric diisocyanate, and optionally at least one multifunctional trisilane or tetrasilane component. A method for making a composition includes (a) providing a silane-terminated polyurethane prepolymer component, a silane-terminated monomeric diisocyanate component, and optionally at least one multifunctional trisilane or tetrasilane component, and (b) combining the prepolymer component, monomeric component, and optional multifunctional silane component to form a silane-terminated polyurethane reaction product with a tensile strength of about 4 MPa or greater and an elongation of about 200% or greater.

A silicon nitride film is formed on a substrate in a reaction chamber by introducing trisilane and a reactive nitrogen species into the chamber in separate pulses. A carbon precursor gas is also flowed into the chamber during introduction of the trisilane and / or during introduction of the reactive nitrogen species, or in pulses separate from the trisilane and reactive nitrogen species pulses. The carbon is used as a dopant in the silicon nitride film and advantageously allows a high stress silicon nitride film to be formed.

The invention relates to an environmental-friendly halogen-free low-smoke flame retardant material for a coaxial cable and a preparation method thereof. The environmental-friendly halogen-free low-smoke flame retardant material comprises the following materials with the content by weight percent: 15 to 30 percent of ethane-vinyl acetate copolymer, 8 to 15 percent of linear low-density polythene, 25 to 60 percent of fire retardant aluminium hydroxide, 10 to 20 percent of fire retardant magnesium hydroxide, 5 to 10 percent of compatilizer ethane-vinyl acetate copolymer graft maleic anhydride copolymer or ethane graft maleic anhydride copolymer, 0.2 to 0.8 percent of antioxygen triphenyl phosphate, 0.4 to 1 percent of surface active agent ethenyl (beta-methoxyl ethyoxyl) trisilane and 0.5 to 1.2 percent of lubricant zinc stearate. The preparation method of the environmental-friendly halogen-free low-smoke flame retardant material comprises the following steps: firstly, mixing the fire retardant aluminium hydroxide at high speed in a high-speed mixing machine till the temperature of the fire retardant aluminium hydroxide achieves 80 to 90 DEG C; using the surface active agent ethenyl (beta-methoxyl ethyoxyl) trisilane to carry out spraying preprocessing after dehydration; adding the materials by weight percent into the high-speed mixing machine to be stirred at high speed for 3 to 5 minutes so that the materials are uniformly mixed; then delivering the mixed materials into a twin-screw extruder to be processed and prilled, wherein the temperature of each section of a screw is as follows: the temperature of a material feeding section is 90 to 110 DEG C, the temperature of a delivering section is 120 to 130 DEG C, the temperature of a plasticizing section is 130 to 140 DEG C, and the temperature of a machine head is 135-145 DEG C; and drying particles after the mixed materials are prilled so as to obtain finished products.

A doped silicon layer is formed in a batch process chamber at low temperatures. The silicon precursor for the silicon layer formation is a polysilane, such as trisilane, and the dopant precursor is an n-type dopant, such as phosphine. The silicon precursor can be flowed into the process chamber with the flow of the dopant precursor or separately from the flow of the dopant precursor. Surprisingly, deposition rate is independent of dopant precursor flow, while dopant incorporation linearly increases with the dopant precursor flow.

Epitaxial layers are selectively formed in semiconductor windows by a cyclical process of repeated blanket deposition and selective etching. The blanket deposition phases leave non-epitaxial material over insulating regions, such as field oxide, and the selective etch phases preferentially remove non-epitaxial material while deposited epitaxial material builds up cycle-by-cycle. Quality of the epitaxial material improves relative to selective processes where no deposition occurs on insulators. Use of a germanium catalyst during the etch phases of the process aid etch rates and facilitate economical maintenance of isothermal and / or isobaric conditions throughout the cycles. Throughput and quality are improved by use of trisilane, formation of amorphous material over the insulating regions and minimizing the thickness ratio of amorphous:epitaxial material in each deposition phase.

A composite organosilicon emulsion as defoaming agent with resistance to high temp and strong alkali is prepared from the polydimethyl siloxane terminated by trisilane group, at least one hydrophilic particle of inorganic metal oxide, a modifier for making the surface of said particle hydrophibic, and a catalyst.

The invention discloses PET (polyethylene glycol terephthalate) fiber / polyacrylonitrile fiber composite sound absorbing cotton, which is prepared from the following ingredients in parts by weight: 70 to 80 parts of PET fibers, 40 to 50 parts of polyacrylonitrile fibers, 10 to 15 parts of emulsifying agents OP-20, 5 to 10 parts of peregal O-15, 80 to 100 parts of PP (propene polymer), 30 to 40 parts of SEBS (styrene ethylene butylene styrene), 15 to 20 parts of calcined clay, 10 to 15 parts of modified kieselguhr, 2 to 3 parts of stearic acid, 5 to 8 parts of diisooctyl phthalate, 4 to 6 parts of tricresyl phosphate, 2 to 3 parts of polyethylene wax, 1 to 2 parts of vinyl (beta-methoxyethoxy) trisilane, 2 to 3 parts of calcium stearate, 1 to 2 parts of dimethyl dimercapto isooctyl acetate tin, 0.5 to 1.5 parts of anti-aging agents ODA (octyl decyl adipate) and 1 to 2 parts of antioxidants 1035. The sound absorbing cotton prepared by the invention has the advantages that the appearance evenness is good, the thickness is uniform, the hand feeling is soft, the product bonding degree is good, the tensile performance is high, the sound absorbing performance is excellent, the flame retardant effect is good, and the like.

The invention discloses an irradiation resistant non-halogen low smoke flame-retardant sheathing material applied to nuclear power stations and a preparation method. The raw materials comprises ethane-vinyl acetate rubber, maleic anhydride stem grafting ethane-vinyl acetate rubber, magnesium hydroxide fire retardant, organic silicon fire retardant, nano cerium oxide, FEF, zinc stearate, stearic acid, vinyl trisilane, Aflux A-16, Aflux A-25, polycarbonate diimine(PCD-50), 2, 2, 4-trimethyl-1, 2-dihydride quinoline, antiager DDA, di-tert-butyl peroxide cumene, triene propylcyanide uric acid ester and decanedioic acid dioctyl, which are heated and mixed to obtain the materials of the invention. The invention features scientific and reasonable formula and proportion, and the process is advanced. The sheathing material features fine irradiation resistance, excellent mechanical properties and long service life, thus being a good irradiation resistant non-halogen low smoke and flame-retardant sheathing material applied to nuclear power stations.

A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid trisilane in a mixture with one or more dopant precursors. The mixture is metered as a liquid and delivered to the injector, where it is then vaporized and injected into the process chamber.

The invention discloses PET (polyethylene glycol terephthalate) fiber / ceramic fiber composite sound absorbing cotton, which is prepared from the following ingredients in parts by weight: 70 to 80 parts of PET fibers, 40 to 50 parts of ceramic fibers, 10 to 15 parts of emulsifying agents OP-4, 5 to 10 parts of peregal O-15, 80 to 100 parts of PP (propene polymer), 30 to 40 parts of SBR (styrene butadiene rubber), 15 to 20 parts of nanometer bauxite, 10 to 15 parts of modified kieselguhr, 2 to 3 parts of stearic acid, 5 to 8 parts of glycerol triglycerin acid ester, 4 to 6 parts of triphenyl phosphate, 2 to 3 parts of microcrystalline wax, 1 to 2 parts of vinyl (beta-methoxyethoxy) trisilane, 2 to 3 parts of zinc stearate, 1 to 2 parts of lead sulfate tribasic, 0.5 to 1.5 parts of anti-aging agents ODA (octyl decyl adipate) and 1 to 2 parts of antioxidants 168. The sound absorbing cotton prepared by the invention has the advantages that the appearance evenness is good, the thickness is uniform, the hand feeling is soft, the product bonding degree is good, the tensile performance is high, the sound absorbing performance is excellent, the flame retardant effect is good, and the like.

Methods are provided for producing SiGe-on-insulator structures and for forming strain-relaxed SiGe layers on silicon while minimizing defects. Amorphous SiGe layers are deposited by CVD from trisilane and GeH4. The amorphous SiGe layers are recrystallized over silicon by melt or solid phase epitaxy (SPE) processes. The melt processes preferably also cause diffusion of germanium to dilute the overall germanium content and essentially consume the silicon overlying the insulator. The SPE process can be conducted with or without diffusion of germanium into the underlying silicon, and so is applicable to SOI as well as conventional semiconductor substrates.

A silicon strained channel MOSFET device and method for forming the same the method providing improved wafer throughput and low defect density including the steps of providing a silicon substrate; epitaxially growing a first silicon layer using at least one deposition precursor selected from the group consisting of disilane, trisilane, dichlorosilane, and silane; epitaxially growing a step-grade SiGe buffer layer over and contacting the first silicon layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; epitaxially growing a SiGe capping layer over and contacting the step-grade SiGe buffer layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; and, epitaxially growing a second silicon layer using at least one deposition precursor selected from the group consisting of disilane, trisilane, dichlorosilane, and silane.

A method of manufacturing a semiconductor device, includes forming a gate insulating film on a semiconductor substrate, and forming a gate electrode on the gate insulting film, wherein forming the gate insulating film includes forming a metal silicate film, and a silicon source used for forming the metal silicate film includes at least one of a first hydrocarbon silicon compound obtained by replacing at least one of hydrogen atoms in monosilane with an alkyl group, a second hydrocarbon silicon compound obtained by replacing at least one of hydrogen atoms in disilane with an alkyl group, and a third hydrocarbon silicon compound obtained by replacing at least one of hydrogen atoms in trisilane with an alkyl group.

A method for forming a strained silicon layer device with improved wafer throughput and low defect density including providing a silicon substrate; epitaxially growing a first silicon layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; epitaxially growing a step-grade SiGe buffer layer over and contacting the first silicon layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; epitaxially growing a SiGe capping layer over and contacting the step-grade SiGe buffer layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; and, epitaxially growing a second silicon layer using at least one deposition precursor selected from the group consisting of disilane and silane.

Methods for the production of trisilane from the pyrolysis of disilane in a single reactor.

A gate of a transistor includes a gate oxide layer formed on a semiconductor device, a first conductive layer pattern including polysilicon doped with boron and formed on the gate oxide layer, a diffusion preventing layer pattern including amorphous silicon formed by a chemical vapor deposition process using a reaction gas having trisilane (Si3H8) and formed on the first conductive layer pattern, and a second conductive layer pattern including metal silicide and formed on the diffusion preventing layer pattern. Since a gate of PMOS transistor includes a diffusion preventing layer having an excellent surface morphology, diffusion of impurities is sufficiently prevented. Thus, the threshold voltage of PMOS transistor may be reduced and threshold voltage distribution may be improved.

A silicon strained channel MOSFET device and method for forming the same the method providing improved wafer throughput and low defect density including the steps of providing a silicon substrate; epitaxially growing a first silicon layer using at least one deposition precursor selected from the group consisting of disilane, trisilane, dichlorosilane, and silane; epitaxially growing a step-grade SiGe buffer layer over and contacting the first silicon layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; epitaxially growing a SiGe capping layer over and contacting the step-grade SiGe buffer layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; and, epitaxially growing a second silicon layer using at least one deposition precursor selected from the group consisting of disilane, trisilane, dichlorosilane, and silane.

Methods for the production of trisilane from the pyrolysis of disilane in a single reactor.

A doped silicon layer is formed in a batch process chamber at low temperatures. The silicon precursor for the silicon layer formation is a polysilane, such as trisilane, and the dopant precursor is an n-type dopant, such as phosphine. The silicon precursor can be flowed into the process chamber with the flow of the dopant precursor or separately from the flow of the dopant precursor. Surprisingly, deposition rate is independent of dopant precursor flow, while dopant incorporation linearly increases with the dopant precursor flow.

The invention discloses a high-strength, high-flexibility, water-proof and oil-proof cable. The cable comprises a cable core and a sheath layer covering the outer side of the cable core, wherein the sheath layer comprises raw materials in parts by weight as follows: 30-35 parts of butadiene styrene rubber, 26-29 parts of phenolic resin, 22-25 parts of fluorine modified polyacrylate, 1.5-1.8 parts of dicumyl peroxide, 0.7-1 part of stearic acid, 1.8-2.2 parts of sulphur, 0.9-1.2 parts of N-isopropyl-N'-phenylenediamine, 2-3 parts of an anti-aging agent RD, 0.4-0.7 parts of bis(triethoxy trisilane) tetrasulfide, 7-10 parts of chlorinated paraffin and 22-25 parts of carbon black. The cable is excellent in water-proof and oil-proof performance and good in weather resistance and corrosion resistance.

A foam concrete insulation board for roofs is characterized by being prepared from raw materials in parts by weight as follows: 500 parts of electric furnace phosphorus slag, 80-100 parts of fly ash, 50-60 parts of kaolin, 30-40 parts of gypsum, 20-30 parts of polyvinyl alcohol, 3-4 parts of sodium fatty alcohol polyoxyethylen ether sulphate, 10-12 parts of glacial acetic acid, 12-15 parts of hydrogen peroxide, 12-15 parts of vinyl acetate, 8-10 parts of diacetone acrylamide, 20-30 parts of cement, 6-8 parts of zinc stearate, 20-30 parts of trisilane, 30-40 parts of ammonium bicarbonate and an appropriate amount of water. The foam concrete insulation board for roofs has the characteristics of being light in weight, low in cost, high in strength and prominent in heat preservation, thermal insulation and sound insulation effect and facilitates construction and installation.

The invention discloses a system and a method for preparing disilane and propyl silane by a silane pyrolysis method. The system is characterized by comprising a raw material heater, a silane pyrolysisreactor, a heat exchange and compression system, a hydrogen separator, a silane coarse separator, a silane separation tower, a disilane coarse separator and a disilane separation tower which are connected in sequence. The gas phase outlet of the hydrogen separator, the gas phase outlet of the silane coarse separator and the gas phase outlet of the silane separation tower are respectively connected with the shell pass inlet of the heat exchange and compression system; the shell pass outlet of the heat exchange and compression system is connected with the inlet of the raw material heater, the top gas phase outlet of the disilane coarse separator and the top gas phase outlet of the disilane separation tower are connected with an external disilane storage tank, and the bottom liquid phase outlet of the disilane separation tower is connected with an external propyl silane storage tank. The system has the advantages of being good in conversion efficiency and high in product purity.